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Full-Text Articles in Physics
Monolayer Doping Of Silicon-Germanium Alloys: A Balancing Act Between Phosphorus Incorporation And Strain Relaxation, Noel Kennedy, Ray Duffy, Gioele Mirabelli, Luke Eaton, Nikolay Petkov, Justin D. Holmes, Chris Hatem, Lee Walsh, Brenda Long
Monolayer Doping Of Silicon-Germanium Alloys: A Balancing Act Between Phosphorus Incorporation And Strain Relaxation, Noel Kennedy, Ray Duffy, Gioele Mirabelli, Luke Eaton, Nikolay Petkov, Justin D. Holmes, Chris Hatem, Lee Walsh, Brenda Long
Cappa Publications
This paper presents the application of monolayer doping (MLD) to silicon-germanium (SiGe). This study was carried out for phosphorus dopants on wafers of epitaxially grown thin films of strained SiGe on silicon with varying concentrations of Ge (18%, 30%, and 60%). The challenge presented here is achieving dopant incorporation while minimizing strain relaxation. The impact of high temperature annealing on the formation of defects due to strain relaxation of these layers was qualitatively monitored by cross-sectional transmission electron microscopy and atomic force microscopy prior to choosing an anneal temperature for the MLD drive-in. Though the bulk SiGe wafers provided are …