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Articles 1 - 10 of 10
Full-Text Articles in Physics
Synthesis Of Mild–Hard Aao Templates For Studying Magnetic Interactions Between Metal Nanowires, Jin-Hee Lim, Aurelian Rotaru, Seong-Gi Min, Leszek Malkinski, John B. Wiley
Synthesis Of Mild–Hard Aao Templates For Studying Magnetic Interactions Between Metal Nanowires, Jin-Hee Lim, Aurelian Rotaru, Seong-Gi Min, Leszek Malkinski, John B. Wiley
Physics Faculty Publications
The sequential application of mild and hard anodization techniques in the fabrication of porous aluminamembranes allows one to decrease the number of continuous pores in anodized aluminium oxide (AAO) templates. Initially, standard mild anodization techniques were used to create porous templates with 100 nm interpore distances and 70 nm pore diameters. Hard anodization treatment on the same membrane then produced interpore distances of about 265 nm with diameters of 110 nm. At the interface between the two anodization steps, many of the mild-side pores were terminated to create a mild–hard membrane (Mi–Ha AAO) where the functional interpore distances were 200–300 …
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Faculty Publications
Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Shireen Adenwalla Papers
Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.
Morphological Evolution Of Single-Crystal Ultrathin Solid Films, Mikhail Khenner
Morphological Evolution Of Single-Crystal Ultrathin Solid Films, Mikhail Khenner
Mathematics Faculty Publications
An introduction to mathematical modeling of ultrathin solid films and the role of such modeling in nanotechnologies: Educational presentation for senior physics majors
Morphological Evolution Of Single-Crystal Ultrathin Solid Films, Mikhail Khenner
Morphological Evolution Of Single-Crystal Ultrathin Solid Films, Mikhail Khenner
Mathematics Faculty Publications
An introduction to mathematical modeling of ultrathin solid films and the role of such modeling in nanotechnologies: Educational/Research presentation for senior physics majors
Oscillatory And Monotonic Modes Of Long-Wave Marangoni Convection In A Thin Film, Sergey Shklyaev, Mikhail Khenner, Alexei Alabuzhev
Oscillatory And Monotonic Modes Of Long-Wave Marangoni Convection In A Thin Film, Sergey Shklyaev, Mikhail Khenner, Alexei Alabuzhev
Mathematics Faculty Publications
We study long-wave Marangoni convection in a layer heated from below. Using the scaling k=O Bi, where k is the wave number and Bi is the Biot number, we derive a set of amplitude equations. Analysis of this set shows presence of monotonic and oscillatory modes of instability. Oscillatory mode has not been previously found for such direction of heating. Studies of weakly nonlinear dynamics demonstrate that stable steady and oscillatory patterns can be found near the stability threshold.
Oscillatory And Monotonic Modes Of Long-Wave Marangoni Convection In A Thin Film, Sergey Shklyaev, Mikhail Khenner, Alexei Alabuzhev
Oscillatory And Monotonic Modes Of Long-Wave Marangoni Convection In A Thin Film, Sergey Shklyaev, Mikhail Khenner, Alexei Alabuzhev
Mathematics Faculty Publications
We study long-wave Marangoni convection in a layer heated from below. Using the scaling k=O Bi, where k is the wave number and Bi is the Biot number, we derive a set of amplitude equations. Analysis of this set shows presence of monotonic and oscillatory modes of instability. Oscillatory mode has not been previously found for such direction of heating. Studies of weakly nonlinear dynamics demonstrate that stable steady and oscillatory patterns can be found near the stability threshold.
Interplay Between The Lattice And Spin Degrees Of Freedom In (Sr1−Xcax)3ru2o7, Jin Peng, David Fobes, Tijian Liu, Xiaoshan Wu, H M. Pham, Leonard Spinu, Z Q. Mao
Interplay Between The Lattice And Spin Degrees Of Freedom In (Sr1−Xcax)3ru2o7, Jin Peng, David Fobes, Tijian Liu, Xiaoshan Wu, H M. Pham, Leonard Spinu, Z Q. Mao
Physics Faculty Publications
The Sr1−xCax3Ru2O7 solid solution series exhibits complex magnetic ground states, ranging from an itinerant metamagnetic state, to a quasi-two-dimensional 2D heavy-mass nearly ferromagneticFM state, and finally to a long-range antiferromagnetically ordered state Z. Qu et al. Phys. Rev. B. 78, R180407 2008. In this paper, we investigate the evolution of structural distortion and magnetic anisotropy with Ca content in this material system. Our results show that both the magnetic phase transitions and magnetic anistropy of this system couple with the evolution of structure distortion. The transformation from the itinerant metamagnetic to the nearly ferromagnetic state is accompanied …
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Materials Research Science and Engineering Center: Faculty Publications
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3 -La0:7 Sr0:3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Physics Faculty Publications
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …