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Full-Text Articles in Physics
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Suppression Of Octahedral Tilts And Associated Changes In Electronic Properties At Epitaxial Oxide Heterostructure Interfaces, A. Y. Borisevich, H. Y. Chang, Mark Huijben, M. P. Oxley, S. Okamoto, Manish K. Niranjan, John D. Burton, Evgeny Y. Tsymbal, Y. H. Chu, P. Yu, R. Ramesh, Sergei V. Kalinin, S. J. Pennycook
Materials Research Science and Engineering Center: Faculty Publications
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3 -La0:7 Sr0:3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition near the interface in BiFeO3 and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Materials Research Science and Engineering Center: Faculty Publications
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a …