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Engineering

2014

Electrical & Computer Engineering Faculty Publications

Articles 1 - 6 of 6

Full-Text Articles in Physics

Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar Jan 2014

Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar

Electrical & Computer Engineering Faculty Publications

During the last two decades, research efforts on the application of low temperature plasmas in biology and medicine have positioned nonequilibrium lowtemperature plasmas as a technology that has the potential of revolutionizing healthcare.[1,2] Low temperature plasmas can be applied in direct contact with living tissues to inactivate bacteria,[3] to disinfect wounds and accelerate wound healing,[4] and to induce damage in some cancer cells.[5–11]

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Stability Of High Band Gap P3ht: Pcbm Organic Solar Cells Using Tiox Interfacial Layer, Kurniawan Foe, Gon Namkoong, Matthew Samson, Enas M. Younes, Ilho Nam, Tarek M. Abdel-Fattah Jan 2014

Stability Of High Band Gap P3ht: Pcbm Organic Solar Cells Using Tiox Interfacial Layer, Kurniawan Foe, Gon Namkoong, Matthew Samson, Enas M. Younes, Ilho Nam, Tarek M. Abdel-Fattah

Electrical & Computer Engineering Faculty Publications

We fabricated a poly [3-hexylthiophene] (P3HT) and [6,6] -phenyl-C61-butyric acid methyl ester (PC61BM with the TiOx layer. We found that a solution based TiOx coated at a spin speed of 3000 rpm improved the photon absorption of the active layer. An optimized TiOx layer was also used as the interfacial layer to investigate the stability of P3HT: PC61BM OPC. After 70 days of storage, we observed that the short-circuit current density (JSC) dropped by 16.2%, fill factor (FF) dropped by 10.6%, and power conversion efficiency (PCE) dropped approximately by 25%, while …

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Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li Jan 2014

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

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Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2014

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …

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Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart Jan 2014

Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart

Electrical & Computer Engineering Faculty Publications

For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)(2), (trimethylsilyl) telluride ((Me3Si)2Te) and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe …

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Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart Jan 2014

Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of …

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