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Articles 1 - 5 of 5
Full-Text Articles in Physics
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer …
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Legacy Theses & Dissertations (2009 - 2024)
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks.
First-Principles Study Of The Electric Field Effect On The Water-Adsorbed Rutile Titanium Dioxide Surface, Abraham L. Hmiel
First-Principles Study Of The Electric Field Effect On The Water-Adsorbed Rutile Titanium Dioxide Surface, Abraham L. Hmiel
Legacy Theses & Dissertations (2009 - 2024)
TiO2 is a semiconducting material that has been used extensively in many industrial applications, and recently has become a candidate for photocatalytic water splitting, fuel cell anode support materials, sensors, and other novel nanodevices. The interface of TiO2 with water, historically well-studied but still poorly understood, presents a ubiquitous environmental challenge towards the ultimate practical usefulness of these technologies. Ground-state density functional theory (DFT) calculations studying the characteristics of molecular adsorption on model surfaces have been studied for decades, showing constant improvement in the description of the energetics and electronic structure at interfaces. These simulations are invaluable in the …
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Legacy Theses & Dissertations (2009 - 2024)
The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …