Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Physics
Laser-Induced Modifications In Two-Dimensional Materials, Tariq Afaneh
Laser-Induced Modifications In Two-Dimensional Materials, Tariq Afaneh
USF Tampa Graduate Theses and Dissertations
Atomically thin two-dimensional (2D) materials have attracted a growing interest in the lastdecade from the fundamental point of view as well as their potential applications in functional devices. Due to their high surface-to-volume ratio, the physical properties of 2D materials are very sensitive to the environmental factor such as surrounding media and illumination conditions (e.g. light-mater interaction). In the first part of this dissertation I will present recent advances in developing laser-assisted methods to tune the physical properties of 2D transition metal dichalcogenides (TMDs). We demonstrate laser-assisted chemical modification ultrathin TMDs, locally replacing selenium by sulfur atoms. The photo-conversion process …
Van Der Waals Epitaxy Of Ultrathin Early Transition Metal (Ti & V) (Di)Selenides: Charge And Magnetic Order In The Ultrathin Limit, Manuel Bonilla Lopez
Van Der Waals Epitaxy Of Ultrathin Early Transition Metal (Ti & V) (Di)Selenides: Charge And Magnetic Order In The Ultrathin Limit, Manuel Bonilla Lopez
USF Tampa Graduate Theses and Dissertations
Since the isolation of graphene in 2004, two-dimensional (2D) layered materials, specially the transition metal dichalcogenides (TMDs), have attracted immense interest from theoreticians and experimentalist due to the diversity of properties presented in this family of materials. The main reason for the interest in such materials has been the observation of emergent properties as a consequence of the reduced dimensions, i.e. the monolayer regime. Initially the monolayer regime was obtained via the scotch-tape method. The implementation of exfoliation techniques was successful since layered 2D materials are composed of stacked layers held together by weak van der Walls forces that permits …
Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews
Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews
Wayne State University Dissertations
The rapid growth of modern electronics industry over the past half-century has been sustained by the continued miniaturization of silicon-based electronics. However, as fundamental limits approach, there is a need to search for viable alternative materials for next-generation electronics in the post-silicon era. Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have attracted much attention due to their atomic thickness, absence of dangling bonds and moderately high carrier mobility. However, achieving low-resistance contacts has been major impediment in developing high-performance field-effect transistors (FETs) based on 2D semiconductors. A substantial Schottky barrier (SB) is often present at the metal/2D-semicondcutor interface, …