Physics Commons^™

Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart

Electrical & Computer Engineering Faculty Publications

For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C₁₁H₁₉O₂)(₂), (trimethylsilyl) telluride ((Me₃Si)₂Te) and bis-(triethyl silyl) selane ((Et₃Si)₂Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe …