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Full-Text Articles in Physics
Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam
Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam
Guru Subramanyam
Vanadium dioxide (VO2) is a unique phase change material (PCM) that possesses a metal-to-insulator transition property. Pristine VO2 has a negative temperature coefficient of resistance, and it undergoes an insulator-to-metal phase change at a transition temperature of 68°C. Such a property makes the VO2 thin-film-based variable resistor (varistor) a good candidate in reconfigurable electronics to be integrated with different RF devices such as inductors, varactors, and antennas. Series single-pole single-throw (SPST) switches with integrated VO2 thin films were designed, fabricated, and tested. The overall size of the device is 380 μm × 600 μm. The SPST switches were fabricated on …
Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam
Vanadium Oxide Thin-Film Variable Resistor-Based Rf Switches, Kuanchang Pan, Weisong Wang, Eunsung Shin, Kelvin Freeman, Guru Subramanyam
Electrical and Computer Engineering Faculty Publications
Vanadium dioxide (VO2) is a unique phase change material (PCM) that possesses a metal-to-insulator transition property. Pristine VO2 has a negative temperature coefficient of resistance, and it undergoes an insulator-to-metal phase change at a transition temperature of 68°C. Such a property makes the VO2 thin-film-based variable resistor (varistor) a good candidate in reconfigurable electronics to be integrated with different RF devices such as inductors, varactors, and antennas. Series single-pole single-throw (SPST) switches with integrated VO2 thin films were designed, fabricated, and tested. The overall size of the device is 380 μm × 600 μm. The SPST switches were fabricated on …
Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors, Jeremy Mares
Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors, Jeremy Mares
Electronic Theses and Dissertations
In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The …
The Effect Of Copt Crystallinity And Grain Texturing On Properties Of Exchange-Coupled Fe/Copt Systems, H. Oguchi, A. Zambano, M. Yu, Jason R. Hattrick-Simpers, D. Banerjee, Y. Liu, Z. L. Wang, J. P. Liu, S. E. Lofland, D. Josell, I. Takeuchi
The Effect Of Copt Crystallinity And Grain Texturing On Properties Of Exchange-Coupled Fe/Copt Systems, H. Oguchi, A. Zambano, M. Yu, Jason R. Hattrick-Simpers, D. Banerjee, Y. Liu, Z. L. Wang, J. P. Liu, S. E. Lofland, D. Josell, I. Takeuchi
Faculty Publications
The effect of the crystallinity and the grain texturing of CoPt hard layers on exchange coupled Fe/CoPt soft/hard magnetic systems was studied using gradient thickness multilayer thin films. We have studied the hard layer structures by transmission electron microscopy and x-ray diffraction, and characterized the exchange coupling interaction through magnetization loops obtained by the magneto-optical Kerr effect measurement. We found that exchange coupling strongly depends on the crystalline characteristics of the CoPt hard layer. There is correlation between the mixture of different grain orientations of the CoPt hard layer and coupling efficiency. In particular, interlayer coupling is enhanced when there …