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Full-Text Articles in Physics
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2-Xvxte3 With X <~ 0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P C. Quayle, C DrašAr, P LošŤÁK
Jeffrey Dyck
The authors report on the hydrostatic pressure dependence of the magnetotransport properties of ferromagnetic Sb2-xVxTe3 single crystals with x=0.02—0.03. Pressure significantly increases the free hole concentration in these compounds. In turn, the Curie temperature is suppressed by roughly 40%, which goes against many models that would predict an increase in Curie temperature with increasing carrier concentration. These results indicate that the ferromagnetism in these materials is carrier mediated and that a full Ruderman-Kittel-Kasuya-Yosida model that takes into account the oscillatory nature of the indirect exchange interaction among localized spins is needed in order to explain the data.
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Jeffrey Dyck
We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.
Novel Ce Magnetism In Cedipnictide And Di‐Ce Pnictide Structures, Paul C. Canfield, J. D. Thompson, Z. Fisk
Novel Ce Magnetism In Cedipnictide And Di‐Ce Pnictide Structures, Paul C. Canfield, J. D. Thompson, Z. Fisk
Paul C. Canfield
Results of electrical resistance and magnetic susceptibility measurements on Ce2Bi, Ce2Sb, CeScGe, CeScSi and CeSb2 are presented. Ce2Bi and Ce2Sb have antiferromagnetictransitions at low temperatures, while CeSb2, CeScGe and CeScSi have ferromagnetictransitions, CeScGe having a T c = 46 K. The data are analyzed with respect to the similarities of the two crystal structure groups that these materials fall into: CeSb2 having the LaSb2structure and the other materials all having the La2Sb structure.