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Full-Text Articles in Physics
Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf
Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf
Faculty Publications
Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the …
Novel Faraday Rotation Effects Observed In Ultra-Thin Iron Garnet Films, Brandon Blasiola
Novel Faraday Rotation Effects Observed In Ultra-Thin Iron Garnet Films, Brandon Blasiola
Dissertations, Master's Theses and Master's Reports
Recent work performed by A. Chakravarty and M. Levy showed experimentally a dramatic increase in the specific Faraday Rotation (FR) of the iron garnet Bi0.8Lu0.2Gd2Fe5O12. A theoretical model, based purely on classical electrodynamics, attempting to explain this behavior was developed by colleagues in Russia that not only confirmed the asymptotic increase in the specific FR at sub-50nm film thicknesses but also suggested that the specific FR should exhibit significant fluctuations at sub-500 nm film thicknesses. The original data points were widespread with steps of 50 nm or more between data …