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Electrical Characterization Of Gasb Based Semiconductors For 2-4 Micrometers Diode Laser Applications, Daniel K. Johnstone
Electrical Characterization Of Gasb Based Semiconductors For 2-4 Micrometers Diode Laser Applications, Daniel K. Johnstone
Theses and Dissertations
Deep Level Transient Spectroscopy (DLTS) was used to characterize the band offsets and deep levels in MBE grown GaSb-based semiconductors that are used in 2-4 µm laser diode structures. One of several deep level traps found in AlxGa1-xAsySb1-y (x=0, 0.5, 0.6, 1.0) is a GaSb double acceptor trap. Progress is also made in establishing the model for the DX center in this material. The degree of compensation of the donor related DX center by GaSb affect where donors are situated, giving preference to one configuration over the many other possible configurations. One minority …