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Examining The Screening Limit Of Field Effect Devices Via The Metal-Insulator Transition, X. Hong, A. Posadas, C. H. Ahn

Xia Hong Publications

The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb(Zr,Ti)O₃, to electrostatically modulate the metallicity of ultrathin manganite La_1−xSr_xMnO₃ (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply …