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Deep Level Defects In Electron-Irradiated Aluminum Gallium Nitride Grown By Molecular Beam Epitaxy, Michael R. Hogsed
Deep Level Defects In Electron-Irradiated Aluminum Gallium Nitride Grown By Molecular Beam Epitaxy, Michael R. Hogsed
Theses and Dissertations
Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, the electrical and optical properties of 1.0 MeV electron irradiated n-AlxGa1-xN are characterized for aluminum mole fraction x = 0.0 to 0.3 using deep level transient spectroscopy (DLTS), temperature-dependent Hall, and cathodoluminescence (CL) measurements. Following irradiation of the AlGaN, it is found that four different electron traps are created, having energy levels within 0.4 eV below the conduction band edge. Three of these traps correspond to …
Photoluminescence Study Of Gan Implanted With Erbium And Erbium-Oxygen, Lori R. Everitt
Photoluminescence Study Of Gan Implanted With Erbium And Erbium-Oxygen, Lori R. Everitt
Theses and Dissertations
Erbium emits at 1540 nm, which propagates well through fiber optic cables. This work studies the photoluminescence (PL) from GaN, GaN implanted with Er alone, and GaN implanted with both Er and O as functions of excitation laser energy and sample temperature. When the exciton bound to a neutral donor recombined, a photon was emitted at 3.47 eV. A photon emitted at 3.457 eV may have been evidence of the recombination of an exciton bound to a neutral acceptor. Second, the Er-ion transitions were observed in two groups around 0.805 and 1.25 eV. The PL intensity was measured at four …