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Full-Text Articles in Physics
Graphene Used As A Lateral Force Microscopy Calibration Material In The Low-Load Non-Linear Regime, Mathias J. Boland, Jacob L. Hempel, Armin Ansary, Mohsen Nasseri, Douglas R. Strachan
Graphene Used As A Lateral Force Microscopy Calibration Material In The Low-Load Non-Linear Regime, Mathias J. Boland, Jacob L. Hempel, Armin Ansary, Mohsen Nasseri, Douglas R. Strachan
Physics and Astronomy Faculty Publications
A lateral force microscopy (LFM) calibration technique utilizing a random low-profile surface is proposed that is successfully employed in the low-load non-linear frictional regime using a single layer of graphene on a supporting oxide substrate. This calibration at low loads and on low friction surfaces like graphene has the benefit of helping to limit the wear of the LFM tip during the calibration procedure. Moreover, the low-profiles of the calibration surface characteristic of these layered 2D materials, on standard polished oxide substrates, result in a nearly constant frictional, adhesive, and elastic response as the tip slides over the surface, making …
Crystallographically-Oriented Carbon Nanotubes Grown On Few-Layer Graphene Films, Douglas R. Strachan, David P. Hunley
Crystallographically-Oriented Carbon Nanotubes Grown On Few-Layer Graphene Films, Douglas R. Strachan, David P. Hunley
Physics and Astronomy Faculty Patents
A thermal and electrical conducting apparatus includes a few-layer graphene film having a thickness D where D≦1.5 nm and a plurality of carbon nanotubes crystallographically aligned with the few-layer graphene film.
Crystallographically-Oriented Carbon Nanotubes Grown On Few-Layer Graphene Films, David P. Hunley, Douglas R. Strachan
Crystallographically-Oriented Carbon Nanotubes Grown On Few-Layer Graphene Films, David P. Hunley, Douglas R. Strachan
Physics and Astronomy Faculty Patents
A thermal and electrical conducting apparatus includes a few-layer graphene film having a thickness D where D≦1.5 nm and a plurality of carbon nanotubes crystallographically aligned with the few-layer graphene film.
Electrostatic Force Microscopy And Electrical Isolation Of Etched Few-Layer Graphene Nano-Domains, D. Patrick Hunley, Abhishek Sundararajan, Mathias J. Boland, Douglas R. Strachan
Electrostatic Force Microscopy And Electrical Isolation Of Etched Few-Layer Graphene Nano-Domains, D. Patrick Hunley, Abhishek Sundararajan, Mathias J. Boland, Douglas R. Strachan
Physics and Astronomy Faculty Publications
Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×1012 Ω with a corresponding gap resistivity greater than about …
Collective Edge Modes Near The Onset Of A Graphene Quantum Spin Hall State, Gunpathy Murthy, Efrat Shimshoni, H. A. Fertig
Collective Edge Modes Near The Onset Of A Graphene Quantum Spin Hall State, Gunpathy Murthy, Efrat Shimshoni, H. A. Fertig
Physics and Astronomy Faculty Publications
Graphene subject to a strong, tilted magnetic field exhibits an insulator-metal transition tunable by tilt angle, attributed to the transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) bulk state at filling factor ν=0. We develop a theoretical description for the spin and valley edge textures in the two phases, and the implied evolution in the nature of edge modes through the transition. In particular, we show that the CAF has gapless neutral modes in the bulk, but supports gapped charged edge modes. At the transition to the FM state the charged edge modes become gapless and are …