Physical Sciences and Mathematics Commons^™

Strain Effect On The Electronic Transport Properties Of Carbyne, Gofur Eshonqulov, Golibjon Berdiyorov, Hicham Hamoudi

Bulletin of National University of Uzbekistan: Mathematics and Natural Sciences

Quantum transport calculations are conducted using density functional theory in combination with Green's functional formalism to study the effect of external strain on the electronic transport properties of carbyne, 1D carbon allotrope, which has recently received a revival of interest due to its extraordinary mechanical, thermal and electronic properties. The current in the system increases monotonically by increasing the compressive strain, whereas the tensile strain results in the reduction of the charge transport. The obtained results are explained by spatial variations of the electrostatic potential along the carbon chain and nanoscale localization of the charge carriers. These findings can be …

Electronic Transport Behavior Of Adatom- And Nanoparticle-Decorated Graphene, Jamie Anne Elias

Arts & Sciences Electronic Theses and Dissertations

To induce a non-negligible spin-orbit coupling in monolayer graphene, for the purposes of realizing the Kane-Mele Hamiltonian, transition metal adatoms have been deposited in dilute amounts by thermal evaporation in situ while holding the device temperature near 4K. Electronic transport studies including measurements such as gate voltage dependent conductivity and mobility, weak localization, high field magnetoresistance (Shubnikov de Haas oscillations), quantum Hall, and nonlocal voltage were performed at low temperature before and after sequential evaporations. Studies of tungsten adatoms are consistent with literature regarding other metal adatoms on graphene but were unsuccessful in producing a spin-orbit signature, at least partially …

Electron Parallel Transport For Arbitrary Collisionality, Jeong-Young Ji, Gunsu S. Yun, Yong-Su Na, Eric D. Held

All Physics Faculty Publications

Integral (nonlocal) closures [J.-Y. Ji and E. D. Held, Phys. Plasmas 21, 122116 (2014)] are combined with the momentum balance equation to derive electron parallel transport relations. For a single harmonic fluctuation, the relations take the same form as the classical Spitzer theory (with possible additional terms): the electric current and heat flux densities are connected to the modified electric field and temperature gradient by transport coefficients. In contrast to the classical theory, the dimensionless coefficients depend on the collisionality quantified by a Knudsen number, the ratio of the collision length to the angular wavelength. The key difference comes from …

Electronic Transport Properties Of Carbon Nanotubes: The Impact Of Atomic Charged Impurities, Ryuichi Tsuchikawa

Electronic Theses and Dissertations

Even changing one atom in nanoscale materials is expected to alter their properties due to their small physical sizes. Such sensitivity can be utilized to modify materials' properties from bottom up and is essential for the utility of nanoscale materials. As such, the impact of extrinsic atomic adsorbates was measured on pristine graphene and a network of carbon nanotubes using atomic hydrogen, cesium atoms, and dye molecules. In order to further quantify such an atomic influence, the resistance induced by a single potassium atom on metallic and semiconducting carbon nanotubes was measured for the first time. Carbon nanotubes are sensitive …

Effects Of Conformational Transformations On Electronic Transport Properties Of Optical Molecular Switches: An Ab Initio Study, Yuan-Yuan He, Jian-Wei Zhao

Journal of Electrochemistry

A series of model molecules with 4 kinds of conformational transformations have been investigated as optical molecular switches by using density functional theory combined with nonequilibrium Green’s function method. The theoretical calculations show that molecules after conformational transformations have photoswitching characteristics. We find that the photochromic molecules with the same conformational transformation usually have a similar current on/off state when they are applied as photoshwitches. Among these transformations, the molecular switch with E(“trans”)/Z(“cis”)-isomerisation of the NN double bond has the highest current on-off ratio. The influences of the energy gap (HLG) between the highest occupied molecular orbital …

Ab-Initio And Model Studies Of Spin Fluctuation Effects In Transport And Thermodynamics Of Magnetic Metals, James K. Glasbrenner

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Magnetic materials are vital to many devices and the manipulation of spins is central to the operation of novel devices such as spin transistors. It is important to understand the effect of spin fluctuations on such systems. In this dissertation, first-principles calculations and models further the understanding of spin fluctuation effects in the transport and thermodynamics of magnetic metals.

A simple classical spin-fluctuation Hamiltonian with a single itinerancy parameter is studied using the mean-field approximation, Monte Carlo simulations, and a generalized Onsager cavity field method. The results of these different methods are in agreement. It is found that the thermodynamics …

Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis

Faculty Publications

Electrical properties of p-Ge_1−ySn_y (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge_1−ySn_y/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge_1−ySn_y layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used …

Electronic Transport In Thermoelectric Bismuth Telluride, Westly Nolting

University of New Orleans Theses and Dissertations

An experimental investigation of the electronic transport properties of bismuth telluride nanocomposite materials is presented. The primary transport measurements are electrical conductivity, Seebeck coefficient and Hall effect. An experimental apparatus for measuring Hall effect and electrical conductivity was designed, constructed and tested. Seebeck coefficient measurements were performed on a commercial instrument. The Hall effect and Seebeck coefficient measurements are two of the most important tools for characterizing thermoelectric materials and are widely used in the semiconductor industry for determining carrier types, carrier concentration and mobility. Further, these transport parameters are used to determine the thermal to electrical conversion efficiency of …

Electronic Transport In Oxygen Deficient Ferromagnetic Semiconducting Tio$_{2-\Delta}$, Soack Dae Yoon, Vincent G. Harris, Carmine Vittoria, A. Widom

Carmine Vittoria

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into …

Electronic Transport In Oxygen Deficient Ferromagnetic Semiconducting Tio$_{2-\Delta}$, Soack Dae Yoon, Vincent G. Harris, Carmine Vittoria, A. Widom

Vincent G. Harris

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into …

Electronic Transport In Oxygen Deficient Ferromagnetic Semiconducting Tio$_{2-\Delta}$, Soack Dae Yoon, Vincent G. Harris, Carmine Vittoria, A. Widom

Allan Widom

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into …

Tailoring A Two-Dimensional Electron Gas At The Laalo3 ∕ Srtio3 (001) Interface By Epitaxial Strain, C. W. Bark, D. A. Felker, Yong Wang, H. W. Jang, C. M. Folkman, J. W. Park, S. H. Baek, H. Zhou, D. D. Fong, X. Q. Pan, Evgeny Y. Tsymbal, M. S. Rzchowski, C. B. Eom

Evgeny Tsymbal Publications

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO₃ and SrTiO₃. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these unique systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO₃∕SrTiO₃ heterointerface remains …

The Fast Recovery Dynamics Of A Quantum Dot Semiconductor Optical Amplifier, T. Piwonski, Guillaume Huyet, Et. Al.

Physical Sciences Publications

We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which corresponds to phonon-assisted interaction is then used to accurately fit experimental recovery curves and allows an estimation of both the carrier capture and escape rates.

Intradot Dynamics Of Inas Quantum Dot Based Electroabsorbers, T. Piwonski, Jaroslaw Pulka, Gillian Madden, Guillaume Huyet, Et. Al.

Physical Sciences Publications

The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots’ ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.

Phase Dynamics Of Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers, T. Piwonski, Guillaume Huyet, Et. Al.

Physical Sciences Publications

The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks.

Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning

Physical Sciences Publications

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.