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2016

Graphene

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Articles 31 - 35 of 35

Full-Text Articles in Physical Sciences and Mathematics

Controllable Growth Of Vertically Aligned Graphene On C-Face Sic, Yu Liu, Lianlian Chen, Hilliard Hilliard, Qing-Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N’Diaye, Elke Arenholz Elke Arenholz, Viton Heera Viton Heera, Wolfgang Skorupa Wolfgang Skorupa, Shengqiang Zhou Jan 2016

Controllable Growth Of Vertically Aligned Graphene On C-Face Sic, Yu Liu, Lianlian Chen, Hilliard Hilliard, Qing-Song Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N’Diaye, Elke Arenholz Elke Arenholz, Viton Heera Viton Heera, Wolfgang Skorupa Wolfgang Skorupa, Shengqiang Zhou

Articles

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized …

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Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri Jan 2016

Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri

Legacy Theses & Dissertations (2009 - 2024)

The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …

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Thermoelectric Transport And Energy Conversion Using Novel 2d Materials, Luke J. Wirth Jan 2016

Thermoelectric Transport And Energy Conversion Using Novel 2d Materials, Luke J. Wirth

Browse all Theses and Dissertations

Nanomaterials hold great promise for applications in thermal management and thermoelectric power generation. Defects in these are important as they are generally inevitably introduced during fabrication or intentionally engineered to control the properties of the nanomaterials. Here, we investigate how phonon-contributed thermal conductance in narrow graphene, boron nitride (BN), and silicene nanoribbons (NRs), responds to the presence of a vacancy defect and the corresponding geometric distortion, from first principles using the non-equilibrium Green's function method. Analyses are made of the geometries, phonon conductance coefficients, and local densities of states (LDOS) of pristine and defected nanoribbons. It is found that hydrogen …

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Polarization Charge Density In Strained Graphene, Noah Wilson Jan 2016

Polarization Charge Density In Strained Graphene, Noah Wilson

Graduate College Dissertations and Theses

Graphene, the world's first truly two-dimensional material, is unique for having an electronic structure described by an effective Lorentz invariant theory. One important consequence is that the ratio or Coulomb energy to kinetic energy is a constant, depending only on conditions within the lattice rather than on the average charge density as in a typical Galilean invariant material. Given this unusual property, a natural question would be how do phenomena, such as screening of a Coulomb impurity, happen in graphene? Moreover, how does the addition of uniaxial strain enhance or diminish this behavior? Here I discuss our work to calculate …

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Physical And Electronic Properties Of Nanoscale 2d Materials, Mathias J. Boland Jan 2016

Physical And Electronic Properties Of Nanoscale 2d Materials, Mathias J. Boland

Theses and Dissertations--Physics and Astronomy

There is a great push towards reducing the size scale of both electronic components and machines. Two dimensional materials, such as graphene, are ideal candidates towards this push, as they are naturally atomically thin. In the case of nanoscale machines, the mechanical properties of the material surfaces become increasingly important. The use of laminar materials, such as graphene and MoS2, to modify the surface properties, yet maintain nanoscale topographical features, are very attractive. Towards this goal, we have investigated the surface properties of MoS2 at the nanoscale using Lateral Force Microscopy (LFM). In these investigations, we measure …

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