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Full-Text Articles in Physical Sciences and Mathematics

). Size Dependency Of The Elastic Modulus Of Zno Nanowires: Surface Stress Effect, Guofeng Wang, Xiaodong Li Dec 2007

). Size Dependency Of The Elastic Modulus Of Zno Nanowires: Surface Stress Effect, Guofeng Wang, Xiaodong Li

Faculty Publications

Relation between the elastic modulus and the diameter (D) of ZnOnanowires was elucidated using a model with the calculated ZnOsurface stresses as input. We predict for ZnOnanowires due to surface stress effect: (1) when D>20nm, the elastic modulus would be lower than the bulk modulus and decrease with the decreasing diameter, (2) when 20nm>D>2nm, the nanowires with a longer length and a wurtzite crystal structure could be mechanically unstable, and (3) when D<2nm, the elastic modulus would be higher than that of the bulk value and increase with a decrease in nanowire diameter.


Microbial Nanowires: Is The Subsurface "Hardwired"?, Dimitrios Ntarlagiannis, Estella A. Atekwana, Eric A. Hill, Yuri A. Gorby Sep 2007

Microbial Nanowires: Is The Subsurface "Hardwired"?, Dimitrios Ntarlagiannis, Estella A. Atekwana, Eric A. Hill, Yuri A. Gorby

Geosciences and Geological and Petroleum Engineering Faculty Research & Creative Works

The Earth's shallow subsurface results from integrated biological, geochemical, and physical processes. Methods are sought to remotely assess these interactive processes, especially those catalysed by micro-organisms. Using saturated sand columns and the metal reducing bacterium Shewanella oneidensis MR-1, we show that electrically conductive appendages called bacterial nanowires are directly associated with electrical potentials. No significant electrical potentials were detectable in columns inoculated with mutant strains that produced non-conductive appendages. Scanning electron microscopy imaging revealed a network of nanowires linking cells-cells and cells to mineral surfaces, "hardwiring" the entire length of the column. We hypothesize that the nanowires serve as conduits …


Micromagnetics Of The Domain Wall Mobility In Permalloy Nanowires, Andrew Kunz Jun 2007

Micromagnetics Of The Domain Wall Mobility In Permalloy Nanowires, Andrew Kunz

Physics Faculty Research and Publications

The domain wall mobility in long permalloy nanowires with thicknesses of 2-20 nm and widths of 50-200 nm has been simulated. The domain wall is driven into motion by an external magnetic field and the average wall mobility is calculated after the wall has traveled 2.5 mum along the wire. The results were obtained using the three-dimensional dynamic Landau-Lifshitz equation. We find that the domain wall mobility decreases linearly up to the critical field called the Walker field. The decreasing wall mobility is related to the decrease in the dynamic domain wall length as the applied field is increased. The …


Template Synthesis And Electrochemical Studies Of Ag_(Core)Au_(Shell) Nanowires, Li Ling, Ya-Xian Yuan, Min-Min Xu, Jian-Lin Yao, Ren-Ao Gu May 2007

Template Synthesis And Electrochemical Studies Of Ag_(Core)Au_(Shell) Nanowires, Li Ling, Ya-Xian Yuan, Min-Min Xu, Jian-Lin Yao, Ren-Ao Gu

Journal of Electrochemistry

Agcore Aushell nanowires with different thicknesses were prepared by combining template synthesis and chemical reduction method,and characterized by SEM and cyclic voltammetry(CV).The CV results revealed that the AgcoreAushell nanowires with pinhole were transferred to pinhole free structure after several potential scans.By using thiophenol(TP)and p-aminothiophenol(PATP)as probe,the surface enhanced Raman scattering(SERS)effect was investigated on the core-shell nanowires.The results indicated that AgcoreAushell nanowires could be served as a potential SERS substrate,and the difference in the spectral feature of PATP adsorbed onto Au and Ag nanowires enable us to diagnose the pinhole effect of core-shell nanowires by SERS.


Thin Film Solar Cells Using Zno Nanowires, Organic Semiconductors And Quantum Dots, Kaitlyn Vansant May 2007

Thin Film Solar Cells Using Zno Nanowires, Organic Semiconductors And Quantum Dots, Kaitlyn Vansant

Dissertations and Theses

A thin film organic/ inorganic hybrid solar cell was fabricated by incorporating ZnO nanowires, n- and p-type organic semiconductors and inorganic quantum dots. The basic cell design involved the electrodeposition of ZnO nanowires grown on a substrate coated with a transparent conductive oxide. The ZnO nanowires were coated with a thin layer of an organic n-type material, followed by a deposition of inorganic quantum dots. A p-type polymer layer was subsequently deposited and the sample was then contacted with gold to form a quantum dot layer sandwiched between a p-n junction of organic conductive materials.

Various materials and processing methods …


How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King Jan 2007

How Surface Stresses Lead To Size-Dependent Mechanics Of Tensile Deformation In Nanowires, M. Ravi Shankar, Alexander H. King

Alexander H. King

It has been proposed that surface and interface stresses can modify the elastic behavior in nanomaterials such as nanowires. The authors show that surface stresses modify the tensile response of nanowires only when nonlinear elastic effects become important leading to cross terms between the applied stress and the surface stress. These effects are only significant when the radius of the nanowire is of the order of a few nanometers. The resulting alteration of tensile stiffness, though effected in part by the nonlinear elastic modulus, is particularly wrought by a modification of the stress state in the deformed nanowire.


Selective Growth Of Single-Crystalline Zno Nanowires On Doped Silicon, Rolf Könenkamp, Robert Campbell Word, M. Dosmailov, J. Meiss, Athavan Nadarajah Jan 2007

Selective Growth Of Single-Crystalline Zno Nanowires On Doped Silicon, Rolf Könenkamp, Robert Campbell Word, M. Dosmailov, J. Meiss, Athavan Nadarajah

Physics Faculty Publications and Presentations

We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.


Development Of Nanostructure Based Corrosion-Barrier Coatings On Steel For Transmutation Applications, Biswajit Das Jan 2007

Development Of Nanostructure Based Corrosion-Barrier Coatings On Steel For Transmutation Applications, Biswajit Das

Transmutation Sciences Materials (TRP)

Advanced transmutation systems require structural materials that are able to withstand high neutron fluxes, high thermal cycling, and high resistance to chemical corrosion. The current candidate materials for such structures are ferritic and ferritic-martensitic steels due to their strong resistance to swelling, good microstructural stability under irradiation, and the retention of adequate ductility at typical reactor operating temperatures.

In parallel, lead-bismuth eutectic (LBE) has emerged as a potential spallation target material for efficient production of neutrons, as well as a coolant in the accelerator system. While LBE has excellent properties as a nuclear coolant, it is also highly corrosive to …


Low-Temperature Charge Transport In Ga-Acceptor Nanowires Implanted By Focused-Ion Beams, S. J. Robinson, C. L. Perkins, T. -C. Shen, J. R. Tucker, T. Schenkel, X. W. Wang, T. P. Ma Jan 2007

Low-Temperature Charge Transport In Ga-Acceptor Nanowires Implanted By Focused-Ion Beams, S. J. Robinson, C. L. Perkins, T. -C. Shen, J. R. Tucker, T. Schenkel, X. W. Wang, T. P. Ma

T. -C. Shen

Ga-acceptor nanowires were embedded in crystalline Si using focused-ion beams. The dc current-voltage characteristics of these wires after annealing are highly nonlinear at low temperatures. A conductance threshold of less than 50mV is observed independent of Ga+ dosage and implant beam overlap. These features suggest a Coulomb blockade transport mechanism presumably caused by a network of Ga precipitates in the substrate. This granular scenario is further supported by measurements of gated nanowires. Nanowires with metallic conductance at low temperatures could be achieved by reducing the current density of the focused-ion beams.