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Articles 1321 - 1350 of 1374
Full-Text Articles in Physical Sciences and Mathematics
A Mean Field Model With Two Order Parameters For Three-Phase Coexistence Near The Tricritical Point, S. Sali̇hoğlu
A Mean Field Model With Two Order Parameters For Three-Phase Coexistence Near The Tricritical Point, S. Sali̇hoğlu
Turkish Journal of Physics
This study gives a mean field model with two order parameters for three-phase coexistence near the multicritical point. The critical exponents calculated from our model are the tricritical exponents for the order parameters, susceptibility and the specific heat. Hence, our mean field model describes adequately the tricritical behaviour of a system in the region of three-phase coexistence.
A Phase Diagram Of The Nematic, Smectic A And Smectic C Phases In Liquid Crystals, S. Sali̇hoğlu, H. Yurtseven
A Phase Diagram Of The Nematic, Smectic A And Smectic C Phases In Liquid Crystals, S. Sali̇hoğlu, H. Yurtseven
Turkish Journal of Physics
In this study we have obtained a phase diagram for the nematic, smectic A and smectic C phases in liquid crystals. For this phase diagram we have studied two different mean field models for a mixture of liquid crystalline system. In our first model we consider the NC and AC transitions as first order, and the NA transition as a second order. In our second model we consider the NC and NA transitions as first order, and the AC transition as a second order.
A Mean Field Model For The Coexistence Of Nematic, Smectic A And Smectic C Phases In Liquid Crystals, H. Yurtseven, S. Sali̇hoğlu
A Mean Field Model For The Coexistence Of Nematic, Smectic A And Smectic C Phases In Liquid Crystals, H. Yurtseven, S. Sali̇hoğlu
Turkish Journal of Physics
We present here a mean field model for the nematic-smectic A-smectic C coexistence of a liquid crystal near the NAC point which is a multicritical point. The critical exponents calculated from our model are tricritical expoenents for the order parameters, susceptibility and the specific heat. Our results show that if the NAC point is the tricritical point, then our mean field model describes adequately the liquid crystalline system in the coexistence region of the nematic-smectic A-smectic C phases.
The Effect Of Spatially Dependent Screening On The Donor Ionization Energy In A Quantum Wire, B.N. Onwuagba
The Effect Of Spatially Dependent Screening On The Donor Ionization Energy In A Quantum Wire, B.N. Onwuagba
Turkish Journal of Physics
The effect of the spatially dependent screening on the ionization energy of a shallow donor in a 1D quantum well wire made of Ga_{1-x}Al_x/GaAs superlattice is presented. A variational approach is used to obtain ionization energy of the on-centre impurity at the origin of the well and the results obtained are compared with the existing values.
Characterization Of Sb Doped Y Bacuo Superconducting Ceramics, K. Kocabaş, N. Kazanci, M. Tepe
Characterization Of Sb Doped Y Bacuo Superconducting Ceramics, K. Kocabaş, N. Kazanci, M. Tepe
Turkish Journal of Physics
In this study the structural characteristics of $Sb_2O_3$ doped $YBa_2Cu_3O_{7-x}$ superconductive ceramics are investigated by electrical and XRD analyses. It is determined that, while in undoped specimens the value of $T_c$ is equal to 92 K, this value is negatively influenced by the addition of $Sb$. Structural phase results obtained from XRD analysis confirm the result obtained from the electrical measurements.
The Effect Of Halogen Impurities On Electrocunductivity Of Chalcogenide Glass Semicunductor Se-As System, A.I. Isaogli, S.M. Ibrahimgizi, A.R. Kamilogli
The Effect Of Halogen Impurities On Electrocunductivity Of Chalcogenide Glass Semicunductor Se-As System, A.I. Isaogli, S.M. Ibrahimgizi, A.R. Kamilogli
Turkish Journal of Physics
DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 \% As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between $10^{-3}$ and $10^{-2}$ at \%. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers $(C^-_1, C^+_3)$ and to the occurrence of new $Cl^-, Br^-$ centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.
The Influence Of The Dispersion Of Boron Silicate On The Migration Of Non-Equilibrium Charge Carriers Generated By Eect Of An Electric Discharge, A.M. Hasanov
Turkish Journal of Physics
ESR was used in an investigation of the influence of Boron Silicate dispersion on the accumulation of paramagnetic centers (PC). It was observed that the rate of accumulation of PC increase by increasing of the grain size (r). At $r < 0.08$ mm the electrons ($F^+$-centers) are localized on the surface and with increasing grain size up to $0.08 < r < 0.22$ mm charge stratification takes place, the electrons are distributed in near-surface layer and the holes ($V$-centers) are localized in the bulk of the insulator. It was established that the transport of non-equilibrium charge carriers (NCC) from the bulk to the surface of Boron Silicate was due to a drift from the depth $(d \sim 10 \mu m)$ to a bulk-charge field generated by an electric discharge. The value of the surface field $E_s \sim 10^5 V/cm$ is determined by experimental results of the data. The kinetics of the isothermal annealing (300 K) are used to establish the influence of the surface field on the annihilation of NCC in the ''dead'' layer of separated charges.
The Submilimeter-Wave Rotational Spectrum Of Isopropyl Alcohol, C. Qajar, S. Musaev
The Submilimeter-Wave Rotational Spectrum Of Isopropyl Alcohol, C. Qajar, S. Musaev
Turkish Journal of Physics
The submilimeter-wave spectrum of the {\em trans} isopropyl alcohol was studied in the frequency range from 240 to 480 GHz. More than 170 lines were assigned to ground state transition. The identification of the high $J$ transitions was checked by centrifugal distortion analysis. The frequencies of all transitions were least squares fitted to the Watson's Hamiltonian, including two $P^8$ terms. The ground-state rotational constants are (in MHz) A = 8489.0150, B = 8041.9182, C = 4765.2326, which yield an asymmetry parameter $\kappa = 0.75986663$.
Quaternionic Roots Of E 8 Related Coxeter Graphs And Quasicrystals, Mehmet Koca, Nazife Özdeş Koca, Ramazan Koç
Quaternionic Roots Of E 8 Related Coxeter Graphs And Quasicrystals, Mehmet Koca, Nazife Özdeş Koca, Ramazan Koç
Turkish Journal of Physics
The lattice matching of two sets of quaternionic roots of $F_4$ leads to quaternionic roots of $E_8$ which has a decomposition $H_4 + \sigma H_4$ where the Coxeter graph $H_4$ is represented by the 120 quaternionic elements of the binary icosahedral group. The 30 pure imaginary quaternions constitute the roots of $H_3$ which has a natural extension to $H_3 + \sigma H_3$ describing the root system of the Lie algebra $D_6$. It is noted that there exist three lattices in 6-dimensions whose point group $W(D_6)$ admits the icosahedral symmetry $H_3$ as a subgroup, the roots of which describe the mid-points …
The Structure Of (001) Csl Twist Boundaries In Fcc Metals, A. Ghafoor, S.A. Ahmad, B.A.S. Faridi
The Structure Of (001) Csl Twist Boundaries In Fcc Metals, A. Ghafoor, S.A. Ahmad, B.A.S. Faridi
Turkish Journal of Physics
Computer simulation techniques based on discrete lattice approach and empirical many-body potentials have been used to study the structure and energy of $\Sigma = 5$, and $\Sigma = 13$ coincident site lattice (001) twist boundaries in three fcc metals. Energy computed for $\Sigma = 5$ boundary in copper is 17.5 \% less than the earlier result obtained by using pair potential. However the present calculations of twist boundary energies are somewhat higher than the results obtained using embedded atom method.
The Influence Of Solvents On Formation Of The Molecular Geometry Of [{Fe(Salphen)}_2o], Mehmet Kabak, Ayhan Elmali
The Influence Of Solvents On Formation Of The Molecular Geometry Of [{Fe(Salphen)}_2o], Mehmet Kabak, Ayhan Elmali
Turkish Journal of Physics
The crystal structure and magnetic properties of the complex (I)=[$\{$Fe(salphen)$\}_2$\-O]$\cdot$(C$_4$\-H$_8$SO) and (II)=[$\{$Fe(salphen)$\}_2$O]$\cdot$(C$_4$H$_8$O$_2$)\- (salphen H$_2$=N,N'-o-phenylenebis\-(salicylidene-imine)) were recently reported [1, 2]. This complex crystallized with the solvents of dimethyl sulfoxide and dioxane. In this paper, we investigate the influence of the solvents on the formation of the molecular geometry and study the orbital mechanism of the magnetic super-exchange interactions of this complex.
The Energy Spectra Of Gaas/Al_Xga_{1-X}As Quantum Dots, Mohammad El-Said, M. Abu Saa
The Energy Spectra Of Gaas/Al_Xga_{1-X}As Quantum Dots, Mohammad El-Said, M. Abu Saa
Turkish Journal of Physics
The energy expressions for QD presented in high- and low-magnetic fields are calculated. An interpolation formula between the energies of the quantum dot in both limits is proposed. The formula is implemented to produce the energy spectra of the parabolic quantum dot in the presence of a magnetic field of arbitrary strength. The transitions in the angular momenta of the ground state energy of interacting electrons confined in the quantum dot as a function of magnetic field strength is studied. A good agreement is obtained when our results are tested against exact numerical work.
Multiple Scales Method For A Matrix Kdv Equation, Mehmet Naci Özer
Multiple Scales Method For A Matrix Kdv Equation, Mehmet Naci Özer
Turkish Journal of Physics
In this paper the method of multiple scales is used to derive an integrable matrix non-linear Schrödinger equation (MNLS) as an amplitude equation from the Matrix Korteweg-de Vries equation (MKdV) associated with symmetric spaces. Then the integrability of the MNLS equation is deduced by the derivation of the spectral problem for the MNLS equation from the spectral problem for the MKdV equation.
Structural And Optical Characterisation Of Vacuum Deposited Cdte Thin Films, Murat Bayhan
Structural And Optical Characterisation Of Vacuum Deposited Cdte Thin Films, Murat Bayhan
Turkish Journal of Physics
The structural and optical properties of vacuum deposited CdTe thin films on glass substrates were investigated. The effect of the heat treatment in air over the former properties of the layers was also examined. Grain sizes of air heated layers estimated by net broading in the XRD spectra were found to be larger than as-grown layers, confirming that grain growth had occurred during the heat treatment. RHEED patterns of the layers grown at substrate temperatures between 150°C and 170°C had a distinct \{111\} preferred orientation. As-grown CdTe layers were slightly p-type, but highly resistive. Air heat treated layers were p-type …
A Time-Dependent Quantum Study Of Li+Hf(\Nu=1) -> Lif(\Nu')+H, Fahrettin Gögtaş, Gabriel G. Balint-Kurti
A Time-Dependent Quantum Study Of Li+Hf(\Nu=1) -> Lif(\Nu')+H, Fahrettin Gögtaş, Gabriel G. Balint-Kurti
Turkish Journal of Physics
Time-dependent quantum wave packet calculations are performed for a model based (two-dimensional) $Li+HF(\nu=1)\ra LiF(\nu^{\prime})+H$ reaction. The reaction probabilities for a broad range of collison energies are calculated by a single solution of the time-dependent Schr\\"{o}dinger equation. The calculated reaction probabilities show many sharp features as a function of energy which are ascribed to scattering resonances.
Remote Sensing And Synchronous Land Surface Measurements Of Soil Moisture And Soil Temperature In The Field, N.V. Kolev, K.P. Penev, Y.M. Kirkova, B.S. Krustanov, T.G. Nazarsky, G.K. Dimitrov, C.P. Levchev, H.I. Prodanov, L.H. Kraleva
Remote Sensing And Synchronous Land Surface Measurements Of Soil Moisture And Soil Temperature In The Field, N.V. Kolev, K.P. Penev, Y.M. Kirkova, B.S. Krustanov, T.G. Nazarsky, G.K. Dimitrov, C.P. Levchev, H.I. Prodanov, L.H. Kraleva
Turkish Journal of Physics
The paper presents the results of remote sensing and synchronous land surface measurements for estimation of soil (surface and profile) water content and soil temperature for different soil types in Bulgaria. The relationship between radiometric temperature and soil surface water content is shown. The research is illustrated by some results from aircraft and land surface measurements carried out over three test areas near Pleven, Sofia and Plovdiv, respectively, during the period 1988-1990.
The Effect Of Temperature Dependent Frequency Factor On The Evaluated Trapping Parameters Of Tsl Glow Curves, A. N. Yazici, Z. Öztürk
The Effect Of Temperature Dependent Frequency Factor On The Evaluated Trapping Parameters Of Tsl Glow Curves, A. N. Yazici, Z. Öztürk
Turkish Journal of Physics
The effect of temperature dependency on frequency factor and its relationship to trapping parameters is discussed by using the peak shape method. The coefficients appearing in the peak shape formula for the calculation of the activation energy have been determined and tabulated for the symmetry factor $\mu_g(X)$ for $x=0.50$ and 0.75 of the peak intensity. It is found that significant errors occur in the value of the trapping parameters if the temperature dependecy of the frequency factor is not consider.
Fine Structure Analysis Of 4702 ^Oa Band Of The Molecule, M.B. Sureshkumar, S.R. Srikant
Fine Structure Analysis Of 4702 ^Oa Band Of The Molecule, M.B. Sureshkumar, S.R. Srikant
Turkish Journal of Physics
The emission spectrum of the cobalt monochloride molecule has been excited in a high frequency discharge tube source and the (0,0) band of H-system at 4702 \AA was photo-graphed at an inverse dispersion of 0.973 \AA/mm in the 5th order of a two meter plane grating spectrograph (Carl-Zeiss). The fine structure analysis of the band has been carried out and the molecular constants are reported for the first time. Rotational isotopic shift due to $^{37}$Cl support the analysis. The electronic transition involved is of the type $0^-$----- $0^-$ of case (c) which is equivalent of $^{3}\sum^{+}$-----$^{3}\sum^+$ or $^5\sum^+$-----$^5\sum^+$.
A Study On The Effect Of Ni Dopping On Bi-Pb-Sr-Ca-Cu-O System, M. Tepe, D. Abukay
A Study On The Effect Of Ni Dopping On Bi-Pb-Sr-Ca-Cu-O System, M. Tepe, D. Abukay
Turkish Journal of Physics
The effect of $Ni$ doping on superconductivity properties of the $Bi_{1.7}Pb_{0.3}Sr_2Ca_2(Cu_{1-x}Ni_x)_3O_y$ system has been investigated by means of $x$-ray diffraction, ac electrical resistance, ac magnetic susceptibility and critical current measurements. The volume fraction of the 2223 phase decreases with increasing $Ni$ concentration. The zero-resistance temperature and the critical current density are suppressed with $Ni$ substitution.
Microscopic Calculations Of The Nucleus-Nucleus Optical Potential, M. M. Osman
Microscopic Calculations Of The Nucleus-Nucleus Optical Potential, M. M. Osman
Turkish Journal of Physics
In present work, a density dependent nucleon-nucleon interactions based on the $G$-matrix elements of the Paris nucleon-nucleon potential have been used to calculate the real part of the nucleus-nucleus optical potential. We have compared our results with those deduced from experiment. We found that our results, obtained using a suitable approximation of the kinetic energy density, agree satisfactory with those extracted from experiment at the strong absorption radius. Moreover, the higher values of the compressibility, $K$, agree better with experiment than the lower values.
Deformation Methods For Investigation Of The Deep Level Parameters In Semiconductors, S. Z. Zainabidinov, A. Abduraimov, O. O. Mamatkarimov, I.G. Tursunov, R.Kh. Khamidov
Deformation Methods For Investigation Of The Deep Level Parameters In Semiconductors, S. Z. Zainabidinov, A. Abduraimov, O. O. Mamatkarimov, I.G. Tursunov, R.Kh. Khamidov
Turkish Journal of Physics
In this paper deformation methods are offered to investigate deep level parameters in semiconductors. It is based on strain parameters measurements of compensated and overcompensated semiconductors. The dynamic changes of current flow in compensated and overcompensated samples of $p$-type $Si: Ni$ and $n$-type $Si: Mn$ under uniform pulse hydrostatic compression (UHC) was investigated. It was observed that in $p$-type $Si: Ni$ samples ionization energy levels $Ni$ at UHC increases, on the contrary in samples $n$-type $Si: Mn$ it decreases. The ionization energy and baric coefficient of the shift of $Ni$ and $Mn$ levels were bounded.
Interrelation Of Magnetic Properties With The Crystal Structures Of Mefese (Me = Ti; V; Cr; Fe; Co; Ni) Compounds, R. Sadikhov, A. Namazov, J. Guseinov
Interrelation Of Magnetic Properties With The Crystal Structures Of Mefese (Me = Ti; V; Cr; Fe; Co; Ni) Compounds, R. Sadikhov, A. Namazov, J. Guseinov
Turkish Journal of Physics
Magnetization of MeFe$_2$Se$_4$ (Me = Ti; V; Cr; Fe; Co; Ni) compounds at low temperatures has been investigated. It is shown that these compounds are ferrimagnetics with low values of specific magnetization. It is established that along the crystal axis $c$ of a given compound, there have been carried out two types of exchange interactions; cation-cation and cation-anion-cation with different dependence of their quantity on interatomic distance.
Anomalous Electrical Characteristics Of Ion Implanted P^+-N Juntions, N. Siddiqui
Anomalous Electrical Characteristics Of Ion Implanted P^+-N Juntions, N. Siddiqui
Turkish Journal of Physics
Electrical characteristics of three $P^+ - n$ diodes fabricated on high resistivity silicon by ion implantation technique are studied by making capacitance-voltage (C-V), reverse current-voltage (I-V) and dielectric spectroscopy of semiconductor (DSS) measurements. The C-V characteristics show abrupt fall in capacitance, while I-V characteristics show abrupt rise in current at the same voltages as in the C-V characteristics. These abrupt discontinuities are ascribed to the formation of defect clusters in the lightly doped base regions where charge transfer might be taking place by thermally assisted tunneling. Low activation energies obtained in the DSS measurements also point toward the same mechanism.
Elastic Scattering Of 344.5 Mev ^{12}C Ions From ^{11}B Nucleus, S.A.E. Khallaf, M.A. Abdel-Rahman, S.K. Abdel-Rahman, S.W.Z. Mahmoud
Elastic Scattering Of 344.5 Mev ^{12}C Ions From ^{11}B Nucleus, S.A.E. Khallaf, M.A. Abdel-Rahman, S.K. Abdel-Rahman, S.W.Z. Mahmoud
Turkish Journal of Physics
The angular distribution of the elastic scattering differential cross section of 344.5 MeV $^{12}$C ions from $^{11}$B nucleus is calculated and compared with the experimental data as well as the previously published calculations. The real part of the central optical potential is derived using the double-folding and single-folding procedures assuming Gaussian forms of the nucleon-nucleon and alpha-nucleon interactions, respectively. A nuclear matter density distribution function of $^{11}$B consisting of a spherical part plus a quadrupole term is used. The inclusion of the quadrupole term is found necessary to obtain good fits to the experimental data.
Reorientation Of Magnetization In Thin Films, Bengü Kaplan
Reorientation Of Magnetization In Thin Films, Bengü Kaplan
Turkish Journal of Physics
The spin wave energy is determined by the competition between uniaxial and cubic anisotropy. We discuss the reorientation temperature $ T_{R} $ of magnetization in two-dimension and calculate its dependence on the exchange, $J$, and the uniaxial anisotropy, $G$, parameters within random phase approximation. We find that $ T_{R} $ varies as $ \sqrt{JG} $ in the planar regime.
Space Charge Limited Current In Films Obtained In Glow Discharge Plasma, M.M. Akhmedov, M.K. Kerimov, B.A. Suleimanov, S.A. Mansimov
Space Charge Limited Current In Films Obtained In Glow Discharge Plasma, M.M. Akhmedov, M.K. Kerimov, B.A. Suleimanov, S.A. Mansimov
Turkish Journal of Physics
The electrical current in thin films obtained by the polymerization of acetonitrile in glow discharge on a heated substrate were investigated in order to determine the mechanism of electrical conduction. The results of the field dependence, sample thickness dependence of the dark conductivity, supported by the results of photocurrent measurements, suggest an exponential energy distribution of traps inside the band gap of the polymer.
Shallow Donors In A Quantum Well Wire; Electric Field And Geometrical Effects, M. Ulaş, H. Akbaş, M. Tomak
Shallow Donors In A Quantum Well Wire; Electric Field And Geometrical Effects, M. Ulaş, H. Akbaş, M. Tomak
Turkish Journal of Physics
Subband and shallow donor binding energies are calculated. The emphasis is given on the electric field effects for wires of different shapes. It is shown that the donor binding energy is sensitive to the interplay of the electric field and geometrical effects.
The Eect Of Exposure Time To Clean Room Air On Characteristic Parameters Of Au /Epilayer N-Si Schottky Diodes, M. Sağlam, Ç. Nuhoğlu, E. Ayyildiz, A. Türüt, H.A. Çeti̇nkara
The Eect Of Exposure Time To Clean Room Air On Characteristic Parameters Of Au /Epilayer N-Si Schottky Diodes, M. Sağlam, Ç. Nuhoğlu, E. Ayyildiz, A. Türüt, H.A. Çeti̇nkara
Turkish Journal of Physics
A study has been made on determination and comparison of current-voltage (I-V) and capacitance-voltage (C-V) characteristics parameters of $Au/n-Si$ Schottky barrier diodes (SBDs) with and without thin native oxide layer fabricated on $n$-type $Si$ grown by LPE (Liquid-phase Epitaxy) technique. The native oxide layer with different thicknesses on chemically cleaned on $Si$ surface were obtained by exposing the surfaces to clean room air before evaporating metal. The native oxide thicknesses of samples D2, D3, D4 and D5 are in the form $D2 < D3 < D4 \leq D5$, depending on the exposing time. It has been seen that the values of barrier height $\Phi_b$ of samples D2(0.64 eV), D3(0.66 eV), D4(0.69 eV) and D5(0.69 eV) with the interfacial layer increased with increasing the exposure time and tended to that of the initial sample D1 (nonoxidezed sample, 0.74 eV), and thus also their I-V and C-V curves. The reverse current of sample D1 showed slight nonsaturating behavior. This ''soft'' behavior has been ascribed to the spatial inhomogeneity in the barrier heights at the MS interface. In particular, reverse bias curves of samples D2, D3, D4 and D5 have shown excellent saturation which may be attributed to the passivation of the semiconductor surface states by the native oxide layer which reduces the penetration of the wave functions of electron in the metal into the semiconductor. Especially, the I-V characteristics and experimental parameters of our devices are in agreement with recently reported results revealed by the pulsed surface photovoltage technique for the electronic properties of the HF-treated Si surface during initial oxidation in air.
\Tau->\Rho\Nu Decay And Leptonic Decay Constants Of Vector Mesons, Kh. Ablakulov, B.N. Kuranov, T.Z. Nasyrov
\Tau->\Rho\Nu Decay And Leptonic Decay Constants Of Vector Mesons, Kh. Ablakulov, B.N. Kuranov, T.Z. Nasyrov
Turkish Journal of Physics
The new Salpeter equation for vector mesons is proposed and the representation for their leptonic decay constants is obtained.
Resonance Production Of New Resonances At Ep And \Gamma P Colliders, A. Çeli̇kel And M. Kantar
Resonance Production Of New Resonances At Ep And \Gamma P Colliders, A. Çeli̇kel And M. Kantar
Turkish Journal of Physics
We study the resonance production of new particles predicted by preonic models at Linac-Ring type $ep$ and $\gamma p$ colliders. It is shown that these machines will allow to investigate the new particles with masses up to few TeV scale.