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Articles 1171 - 1200 of 1374
Full-Text Articles in Physical Sciences and Mathematics
Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon
Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon
Turkish Journal of Physics
We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made using heat pulse techniques. For layers grown on GaAs substrates the results show that the carriers reside in the substrate, probably as in a GaAs/AlGaAs heterojunction. For layers grown on sapphire substrates we obtain a P \propto T^4_e dependence for the relaxation rate in the low temperature limit, consistent with piezoelectric coupling in the so-called `dirty' regime, changing to a linear dependence in the high temperature, …
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Turkish Journal of Physics
Si-doped single Ga_{0.51}In_{0.49}P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effect and Deep Level Transient Spectroscopy techniques. Electrical characterization of the undoped and moderately Si-doped (N_D = 3 x 10^{17} cm^{-3}) GaInP layers yielded an electron trap with an activation energy of 0.75 eV and a temperature dependent capture cross section with a capture barrier of 0.593 eV showing DX center properties. The trap was not detected in highly Si doped (N_D = 4 x 10^{18} cm^{-3}) as grown layers suggesting that it is a defect complex …
Giant Efficiency Of Fröhlich Interaction In Self-Assembled Quantum Dots, A. W. E. Minnaert, A. Yu. Silov, J. E. M. Haverkort, J. H. Wolter, A. Garcia, V. N. Gladilin, V. M. Fomn, J. T. Devreese
Giant Efficiency Of Fröhlich Interaction In Self-Assembled Quantum Dots, A. W. E. Minnaert, A. Yu. Silov, J. E. M. Haverkort, J. H. Wolter, A. Garcia, V. N. Gladilin, V. M. Fomn, J. T. Devreese
Turkish Journal of Physics
A transition is being observed from an inhomogeneously broadened photoluminescence band under non-resonant excitation of InAs/GaAs Self-Assembled quantum Dots (SAD's) into up to five phonon-assisted emission bands under selective excitation. A similar effect is obtained from photoluminescence excitation experiments (PLE). We interpret the phonon-assisted PL as being due to a giant efficiency of the Fröhlich interaction between an exciton polarized by strain in the SAD and LO-phonons. The model is consistent with the pronounced p-type polarization of the emission observed in our cleaved-side PL-measurements. Further support is obtained from our calculations in which a different localization of the electrons and …
Modelling Of Devices For Optoelectronic Applications: The Quantum Confined Stark Effect And Self-Electrooptic Effect Devices, Eckehard Scholl
Modelling Of Devices For Optoelectronic Applications: The Quantum Confined Stark Effect And Self-Electrooptic Effect Devices, Eckehard Scholl
Turkish Journal of Physics
Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory …
Semiconductor And Dielectric Microcavity Spectroscopy, Ali̇ Serpengüzel
Semiconductor And Dielectric Microcavity Spectroscopy, Ali̇ Serpengüzel
Turkish Journal of Physics
Semiconductor and dielectric microcavities are used for the localization of photons as well as the enhancement of photon density of states. The enhancement of photoluminescence, electroluminescence, and lasing by the use of microcavities leads to novel active and passive optoelectronic and photonic devices such as channel droppping filters, semiconductor lasers, and resonant cavity enhanced devices. Experimental results showing photoluminescence enhancement in active planar, lasing in active ellipsoidal microcavities as well as light scattering in passive and spherical microcavities are presented.
Experimental Separation Of Phonon And Extrinsic Scattering In 2d Carrier Gases In Gaas, F. F. Ouali, H. R. Francis, H. C. Rhodes
Experimental Separation Of Phonon And Extrinsic Scattering In 2d Carrier Gases In Gaas, F. F. Ouali, H. R. Francis, H. C. Rhodes
Turkish Journal of Physics
A new method which separates phonon scattering from extrinsic scattering in 2D gases in GaAs is presented. In contrast to previous ones, the technique makes no assumptions about the temperature dependence of the extrinsic scattering. The preliminary measurements of the phonon limited mobility \mu_{ph} on two electron gas samples show a Bloch-Grüneisen regime in the temperature range 1.2-4.5K and the results agree reasonably well with other experimental and theoretical work.
Optimisation Of The Tunable Wavelength Hot Electron Light Emitter, Ali̇ Teke, Naci̇ Balkan
Optimisation Of The Tunable Wavelength Hot Electron Light Emitter, Ali̇ Teke, Naci̇ Balkan
Turkish Journal of Physics
We report on the optimization of the hot electron tunable wavelength surface light emitting device developed by us. The device consists of a p-GaAs, and n-Ga_{1-x}Al_xAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side, and is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction). The device utilises hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. In order to optimise the operation of the device a theoretical model that calculates the tunnelling and the thermionic components of the …
Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak
Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak
Turkish Journal of Physics
We study the Wigner crystallization in semiconductor quantum wires within the density functional approach. As the density of electrons in quasi-one-dimensional structures is lowered, we find that the system favors the crystalline phase as envisioned by Wigner.
Binding Energies Of Excitons In Symmetric And Asymmetric Coupled Double-Quantum Well Structures In A Magnetic Field, Esi̇n Kasapoğlu, Hüseyi̇n Sari, Yüksel Ergün, Sezai̇ Elagöz, Naci̇ Balkan, İsmai̇l Sökmen
Binding Energies Of Excitons In Symmetric And Asymmetric Coupled Double-Quantum Well Structures In A Magnetic Field, Esi̇n Kasapoğlu, Hüseyi̇n Sari, Yüksel Ergün, Sezai̇ Elagöz, Naci̇ Balkan, İsmai̇l Sökmen
Turkish Journal of Physics
The binding energy of excitons in the symmetric and asymmetric coupled double GaAs/Ga_{1-x}Al_xAs quantum wells is calculated by using variational approach. Results have been obtained as a function of the potential symmetry, the size of the quantum well, and the coupling parameter of the wells in the presence of a magnetic field applied parallel to the growth direction. The role of the asymmetric barriers, magnetic field, barrier and well width in determining the tunability of the excitonic binding parameters of the GaAs/Ga_{1-x}Al_xAs system is discussed.
Stability Of Quasi-Two-Dimensional Bipolarons, R. Tuğrul Senger, Ati̇lla Erçelebi̇
Stability Of Quasi-Two-Dimensional Bipolarons, R. Tuğrul Senger, Ati̇lla Erçelebi̇
Turkish Journal of Physics
The stability criteria of quasi-two-dimensional dimensional bipolarons have been studied within the framework of strong coupling and path-integral theories. It is shown that the critical values of the electron-phonon coupling constant (\alpha), and the ratio of dielectric constants (\eta = \epsilon_{\infty}/\epsilon_{0}) exhibit some non-trivial features as the effective dimensionality is tuned from three to two.
Band-Gap Renormalization In Quantum Wires, K. Güven, C. R. Bennett, B. Tanatar
Band-Gap Renormalization In Quantum Wires, K. Güven, C. R. Bennett, B. Tanatar
Turkish Journal of Physics
Improved techniques in semiconductor fabrication increased the interest in quantum wire structures, because of their opto-electronic device application possibilities. Many-body interactions among the electrons and holes in the wire lead to the band-gap renormalization (BGR), which in turn affect the optical properties of the system. We study the BGR within the random-phase approximation incorporating the dynamical effects, and investigate the density dependence.
Light Emission From Travelling Space Charge Domains, M. Hostut, N. Balkan
Light Emission From Travelling Space Charge Domains, M. Hostut, N. Balkan
Turkish Journal of Physics
We report light emission from n-doped GaAs epilayers associated with impact ionization when the device is biased in the negative difference resistance (NDR) regime (F > 3.5 kV cm^{-1}). Spectral distribution of the emitted light (electroluminescence) has been measured to identify the energy distribution of the recombining electron-hole pairs. Electron temperatures, calculated from the high energy tail of the electroluminescence spectra, show that the light emission is due to the recombination of the impact ionized holes with the background, channel, and the travelling space charge electrons. The range of the electron temperatures obtained indicate that the contribution to the light emission …
The Orbit Center Dependence Of The Energy Levels In A Multiple Quantum Wells Under External Tilted Magnetic And Electric Fields, R. Amca, Y. Ergün, H. Sari, S. Elagöz, İ. Sökmen
The Orbit Center Dependence Of The Energy Levels In A Multiple Quantum Wells Under External Tilted Magnetic And Electric Fields, R. Amca, Y. Ergün, H. Sari, S. Elagöz, İ. Sökmen
Turkish Journal of Physics
An analytical solution to the Schrödinger equation for a multiple quantum well system subjected to an externally applied electric field the growth direction and an externally applied tilted magnetic field are obtained and the results are discussed. The energy dependence energy spectrum of the system as a function of the external electric field and the orbit center is also discussed.
Carrier Transport And Band Offsets In Two Dimensional Heterostructures, Hi̇lmi̇ Ünlü
Carrier Transport And Band Offsets In Two Dimensional Heterostructures, Hi̇lmi̇ Ünlü
Turkish Journal of Physics
Advances in the low dimensional heterojunction device technology cannot be complete without adequate and reliable analytic model for determining interface properties such as band offsets needed to study the carrier transport and to evaluate the device performance at high temperatures and pressures. In this article, using the extended universal tight binding model of semiconductors, a new way of determining the band offsets in heterostructures is presented. In this model the band offsets are first determined by aligning the vacuum level, defined relative to valence band maximum which is screened by optical dielectric constant of semiconductors, at the interface at absolute …
Bands Of Localized Electromagnetic Waves In Random Collections Of Dielectric Particles, Marian Rusek, Arkadiusz Orlowski
Bands Of Localized Electromagnetic Waves In Random Collections Of Dielectric Particles, Marian Rusek, Arkadiusz Orlowski
Turkish Journal of Physics
Anderson localization of electromagnetic waves in random arrays of dielectric cylinders is studied. An effective theoretical approach based on the finite size scaling analysis of transmission is developed. The disordered dielectric medium is modeled by a system of randomly distributed 2D electric dipoles. The appearance of the band of localized waves emerging in the limit of an infinite medium is discovered. It suggests deeper insight into existing experimental and theoretical results.
Feasibility Of Fabrication Of Heteroepitaxial Ge_X Si_{1-X}/Si(111) Structure By Pulsed Nd: Yag Laser, R. N. Al-Rawi, R. A. Ismail, R. N. Mousis
Feasibility Of Fabrication Of Heteroepitaxial Ge_X Si_{1-X}/Si(111) Structure By Pulsed Nd: Yag Laser, R. N. Al-Rawi, R. A. Ismail, R. N. Mousis
Turkish Journal of Physics
Heteroepitaxial Ge_x Si_{1-x} alloy layers have been formed by 10 ms and 300 \mu s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å are thermally evaporated onto Si(111) under vacuum pressure \sim 10^{-5} Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are (4.6-6.5) \mum thick and have a Ge fraction of x = 6-8.2%.
Electrical Switching In Potassium-Boro-Vanadate-Iron Glasses, H. R. Panchal, D. K. Kanchan
Electrical Switching In Potassium-Boro-Vanadate-Iron Glasses, H. R. Panchal, D. K. Kanchan
Turkish Journal of Physics
Electrical switching has been observed in 20K_2O : (75-y)V_2O_5 : yB_2O_3 : 5Fe_2O_3 glasses which were prepared by a splat quenching method. To investigate switching phenomenon, glass samples of the same dimension from as quenched material were examined for their I-V characteristics at various ambient temperatures. The exponential decrease of switching voltage is observed with increasing ambient temperature indicating the cause of switching due to Joule's heating. It is also observed that the switching voltage can be controlled by varying the ambient temperature and switching temperature by changing the voltage. The dependence of switching temperature on the amount of V_2O_5 …
Electronic And Lattice Thermal Conductivity Of Bi_{1-X} Sb_X And Ag-Sb-Te Systems, Sabi̇r Ali̇yev, Agami̇rza Movsum-Zadeh, Sadiyar Ragimov, Eldar Zulfigarov
Electronic And Lattice Thermal Conductivity Of Bi_{1-X} Sb_X And Ag-Sb-Te Systems, Sabi̇r Ali̇yev, Agami̇rza Movsum-Zadeh, Sadiyar Ragimov, Eldar Zulfigarov
Turkish Journal of Physics
An investigation of the electronic (\aleph_e) and lattice (\aleph_L) parts of the thermal conductivity for samples of Bi_{1-x} Sb_x (0,02 < X < 0,12) and system of Ag-Sb-Te was carried out in the temperature interval 6-300K. Separation of \aleph_L and \aleph_e has been made by suppressing \aleph_e in magnetic field. The experimental data of \aleph_L and \aleph_e have been compared, respectively, with Gallaway's theory and with a theory which takes into account the inelastic character of scattering. It is observed that the Lorentz number L calculated by using the experimental values of \aleph_e and thermomagnetic coefficients is smaller than its Zommerfeld's value L_0 in high doping Bi_{0.88}Sb_{0.12}. A satisfactory agreement between the theory and the experiment allows to conclude that besides the normal and U-processes in Bi_{1-x}Sb_x the defects of mass also plays a considerable role in scattering. It is observed that \aleph_L of single phase samples Ag_{0.82}Sb_{1.18}Te_{2.18} is smaller than AgSbTe_2 samples. It is shown that this is due to the presence of p-Ag_2 Te in AgSbTe_2. It is established that the high concentration of intrinsic defects plays a considerable role in scattering for Ag-Sb-Te as well.
The Peculiarities Of The Electrical And Thermoelectrical Properties Of P-Type Ag_2te, Ali̇ İhsan Demi̇rel, S. A. Aliev, F. F. Aliev, F. Z. Guseynov, Sali̇m Orak
The Peculiarities Of The Electrical And Thermoelectrical Properties Of P-Type Ag_2te, Ali̇ İhsan Demi̇rel, S. A. Aliev, F. F. Aliev, F. Z. Guseynov, Sali̇m Orak
Turkish Journal of Physics
The electrical and thermoelectrical properties of p-type Ag_2Te have been investigated. Various peculiarities were observed: the minimum (at T \approx 65 K) and maximum (at T \approx 200 K) on the temperature dependence of conductivity \sigma (T); the weak dependence of Hall coefficient R(T) (in 200-300 K range) and the maximum (at T \approx 100 K and 250 K) on the temperature dependence of thermal power \alpha_0 (T). The investigation results were interpreted by two-bands model. It is shown that mentioned peculiarities have been stimulated by the narrow gap of Ag_2Te and its temperature dependence.
Relative L X-Ray Fluorescene Cross-Sections In Heavy Elements In The Energy Region Of 16-122 Kev, Oğuz Doğan, Mehmet Ertuğrul, Önder Şi̇mşek, Ümi̇t Turgut, Hasan Erdoğan
Relative L X-Ray Fluorescene Cross-Sections In Heavy Elements In The Energy Region Of 16-122 Kev, Oğuz Doğan, Mehmet Ertuğrul, Önder Şi̇mşek, Ümi̇t Turgut, Hasan Erdoğan
Turkish Journal of Physics
Relative L1, L\alpha, L\beta and L\gamma x-ray fluorescence cross-sections were observed in Ta, W, Re, Au, Hg, T1, Pb, Bi, Th and U of 16.03, 17.78, 22.58, 25.77, 32.89, 38.18, 43.94, 50.21, 59,5 and 122 keV energies. In this study, L X-ray fluorescence cross-sections were measured at 59.5 and 122 keV and measured values of the other energies were taken from tables by Mann et. al. (1). The experimental relative fluorescene cross-sections were computed for the excitation energies 16.03, 17.78, 22.58, 25.77, 32.89, 38.18, 43.94, 50.21, 59.5 and 122 keV, compared with the theoretically calculated values by Scofield(11). The experimental …
Confined Bipolarons In The Strong Coupling Limit, R. Tuğrul Senger, Ati̇lla Erçelebi̇
Confined Bipolarons In The Strong Coupling Limit, R. Tuğrul Senger, Ati̇lla Erçelebi̇
Turkish Journal of Physics
Within the framework of the strong-coupling polaron theory and the bulk phonon approximation we report the possibility and criteria in achieving stable bipolaron states in confined media. We use a simple model of two electrons constrained within an anisotropic three dimensional parabolic potential box of tunable barrier slopes. Conforming the confining potential from one geometry to the other, we obtain an explicit tracking of the stability criteria as a function of the degree of confinement uncovering all low dimensional major geometric configurations of common interest.
Electroweak Symmetry Breaking In Low-Scale Quantum Gravity, M. Boz, A. Demi̇r, Namik Kemal Pak
Electroweak Symmetry Breaking In Low-Scale Quantum Gravity, M. Boz, A. Demi̇r, Namik Kemal Pak
Turkish Journal of Physics
We discuss the implications of low-scale quantum gravity on electroweak symmetry breaking by computing one-loop gravitational corrections to the Higgs potential. We conclude that these radiative corrections are quite large after summing over the graviton and dilaton Kaluza-Klein towers, and there is no possibility of electroweak symmetry breaking unless one allows for the complex vacuum expectation value for the Higgs field.
Projectile Fragmentation In Emulsion At (4.1-4.5) A Gev/C, A. El-Naghy, S. A. H. Abou-Steit, M. Mohery
Projectile Fragmentation In Emulsion At (4.1-4.5) A Gev/C, A. El-Naghy, S. A. H. Abou-Steit, M. Mohery
Turkish Journal of Physics
The fragmentation process has been investigated for 4.5A GeV/c^{28}Si nuclei in emulsion and compared with the results of 4.5A GeV/c^{24}Mg and 4.1A GeV/c^{22}Ne in order to test the validity of the different theoretical models. It has been found that a single parameter distribution is insufficient to explain exactly the fragmentation process. Correlation studies have shown to be necessary for distinguishing between the different theoretical models for the fragmentation. The impact parameter, which defines the nature of the collision, has been found to influence considerably the shape of the charge yield distribution. The angular distributions of the projectile fragments can be …
Stellar Observations Made At The Malatya Danjon Astrolabe Station, Orhan Gölbaşi, Hüseyi̇n Kiliç, Fernand Chollet
Stellar Observations Made At The Malatya Danjon Astrolabe Station, Orhan Gölbaşi, Hüseyi̇n Kiliç, Fernand Chollet
Turkish Journal of Physics
We give here the first results of astrometric stellar observations made at the Malatya Station with the modified astrolabe of Paris observatory. This campaign is conducted as part of a cooperation between Inönü University and the Paris Observatory. The astrolabe, which is strictly similar to that of Santiago de Chile, can use two reflecting prisms instead of the trnsparent prism of the Danjon Astrolabe. Consequently, it is possible to observe at the two zenith distances of 30° and 60°. The time is supplied by a GPS receiver which gives UTC with the necessary precision. As the station is a new …
Canonical Treatment Of Regular Lagrangians With Holonomic Constraints As Singular Systems, Eqab M. Rabei
Canonical Treatment Of Regular Lagrangians With Holonomic Constraints As Singular Systems, Eqab M. Rabei
Turkish Journal of Physics
Regular Lagrangians with holomonic constraints are treated as singular systems using the canonical method. The Lagrange multipliers are introduced as generalized coordinates. The regular Lagrangians are extended to be singular and the Hamiltonian formulation is obtained. The equations of motion are written as total differential equations in terms of the time t and the Lagrange multipliers. It is also shown that Lagrange multipliers can be determined from the integrability conditions.
Magnetisation In Two-Dimensions, Bengü Kaplan
Magnetisation In Two-Dimensions, Bengü Kaplan
Turkish Journal of Physics
We discuss the magnetisation deviation in two-dimensions (2d) for an iron film for which the anisotropy is much smaller and hence the magnetisation is a stronger function of temperature. The magnetisation deviation can be adequately described by an RPA (random phase approximation) approach. Our results fit the experimental data at high fields and hence can be used to estimate the value of the effective exchange interaction (J_{2d}) for monolayer (ML) films.
Low-Magnetic Field Microwave Absorption In Superconductors And Conducting Polymers, I. L. Khairullin, P. K. Khabibullaev, V. Yu. Sokolov, A. A. Zakhidov
Low-Magnetic Field Microwave Absorption In Superconductors And Conducting Polymers, I. L. Khairullin, P. K. Khabibullaev, V. Yu. Sokolov, A. A. Zakhidov
Turkish Journal of Physics
Low-magnetic field microwave absorption (MA) in superconductors and conducting polymers is analysed in a low-field signal (LFS) version of the MA detecting method. The temperature dependences, hysteretic benavior and other properties of a LFS are compared in superconducting versus non-superonducting systems. Spin selective hopping processes between polarons and bipolarons is proposed to be one of the possible mechanisms of a LFS in non-degenarate conducting polymers.
Magnetic Excitations In Random Anisotropic Magnets, İbrahim Avgin
Magnetic Excitations In Random Anisotropic Magnets, İbrahim Avgin
Turkish Journal of Physics
A study is made for the magnetic excitations and their Anderson localization properties for a Heisenberg ferromagnet with random anisotropic fields. The system is assumed to be in a strong applied field so that complete spin alignment is established. The magnetic excitations, i.e., the harmonic spin waves, are computed using coherent-field-anisotropy approximation (a version of coherent potential approximation of the electronic problem). The spin wave shift and damping are calculated using the computed coherent field which is a complex function of energy approximating the random medium as a mean field level. The localizaton of the excitations are calculated by adopting …
Photometric Imaging With Distributive Solar Analogy, Zeki̇ Eker
Photometric Imaging With Distributive Solar Analogy, Zeki̇ Eker
Turkish Journal of Physics
The importance of DSA (Distributive Solar Analogy) when modeling starspots from a photometric data is discussed. It's advantage over the other modeling techniques to confine the solution parameters, especially the spot latitudes are described. Unlike the other photometric techniques which tries to locate limited number of cool surface spots, DSA aims to model global distribution of all virtually existing spots.
Butt-Coupling Loss Of 0.1 Db/Interface In Inp/Ingaas Multi-Quantum-Well Waveguide-Waveguide Structures Grown By Selective Area Chemical Beam Epitaxy, C. A. Verschuren, M. R. Leys, H. Vonk, J. H. Wolter, P. J. Harmsma, Y. S. Oei
Butt-Coupling Loss Of 0.1 Db/Interface In Inp/Ingaas Multi-Quantum-Well Waveguide-Waveguide Structures Grown By Selective Area Chemical Beam Epitaxy, C. A. Verschuren, M. R. Leys, H. Vonk, J. H. Wolter, P. J. Harmsma, Y. S. Oei
Turkish Journal of Physics
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out under the same growth conditions on (100) lnP substrates misoriented by 0.5° towards (111)B. Both planar and selectively grown material exhibits bright luminescence and narrow PL line widths (8 meV FWHM at 4K), up to the lateral junction. Moreover, no degradation of the original material properties is observed after regrowth. SEM images show very flat layers and excellent lateral coupling for all four types of junctions. After reactive ion etching of …