Physical Sciences and Mathematics Commons^™

Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons

Theses

The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al_.25Ga_.75As on a GaAs substrate, Al_.30Ga_.7OAs on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al_.30Ga_{.7O …}

Characterization Of Low Pressure Chemical Vapor Deposited Silicon Dioxide Thin Films, Xue Du

Theses

LPCVD deposited amorphous silicon dioxide SiO₂ thin films from a new chemical vapor source, diethylsilane (DES), were characterized. This work is focused on evaluation of SiO₂ films prepared by varies deposition temperatures and flow rates series.

SiO₂ thin films were evaluated for density, porosity, and refractive index. Techniques for evaluation of the above mentioned parameters for this work included the use of infrared absorption spectroscopy, preferential etch procedures, optical measurement of refractive index and thickness, and thermal annealing of CVD films. The densification in vacuum ambient has been carried out at the temperature of 600 °, 750 …