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Full-Text Articles in Physical Sciences and Mathematics
Statistics Of Multicharge Centers In Semiconductors - Applications, David C. Look
Statistics Of Multicharge Centers In Semiconductors - Applications, David C. Look
Physics Faculty Publications
A general formula is derived for the electron occupation numbers appropriate for multicharge centers in semiconductors, including excited states. The results are used to rederive and generalize several formulas of interest in the literature, in order to show exactly how the degeneracies of individual states enter in. Particular attention is paid to certain subjects which are sometimes confusing, such as how the statistics of band states differ from those those of localized states. Another subject of much recent interest, negative-U centers, is dealt with in some detail. We show how the dependence of the average occupation number on Fermi …
Student Profile, Fall 1981, Wright State University, Dayton, Ohio, Office Of Student Information Systems, Wright State University
Student Profile, Fall 1981, Wright State University, Dayton, Ohio, Office Of Student Information Systems, Wright State University
Wright State University Student Fact Books
The student profile fact book has general demographic information on all students enrolled at Wright State University for Fall Quarter, 1981.
O++ In The Venusian Ionosphere, Jane L. Fox, G. A. Victor
O++ In The Venusian Ionosphere, Jane L. Fox, G. A. Victor
Physics Faculty Publications
It is shown that the revised photochemical theory for O++ in the earth's ionopshere, where double photoionization of O is the dominant source, is consistent with recent O++ measurements on Venus. A rate coefficient of 1.5 × 10−10 cm³ s−1 for O++ + O is obtained, and the possible importance of O++ chemistry on minor atomic ions and airglow emissions is explored.