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Full-Text Articles in Physical Sciences and Mathematics

Student Profile, Fall 1980, Wright State University, Dayton, Ohio, Office Of Student Information Systems, Wright State University Oct 1980

Student Profile, Fall 1980, Wright State University, Dayton, Ohio, Office Of Student Information Systems, Wright State University

Wright State University Student Fact Books

The student profile fact book has general demographic information on all students enrolled at Wright State University for Fall Quarter, 1980. The cover of the book has a 1980 sticker on it as well as an ink stamp that reads, "Wright State University Student Information Systems".


Automation Of A Popular Monochromator, David C. Look, J. W. Farmer, R. N. Ely Jul 1980

Automation Of A Popular Monochromator, David C. Look, J. W. Farmer, R. N. Ely

Physics Faculty Publications

A wavelength‐scan and intensity‐control system for a widely‐used, high‐intensity monochromator is described. The wavelength scan is bidirectional and variable speed, and may be controlled manually or by TTL logic from a computer. The intensity control is effected by use of a programmable dc power supply and D–A converter. Various filters are described which allow an intensity of up to 2×1014 photons/cm2 s to be achieved in a 1 cm×3 cm area over a wavelength range 0.76–2.50 μm, at 0.07 μm bandwidth, with a single grating. (A lesser intensity is available to 3.4 μm.) This wide range is made …


Electron Irradiation Defects In N-Type Gaas, J. W. Farmer, David C. Look Apr 1980

Electron Irradiation Defects In N-Type Gaas, J. W. Farmer, David C. Look

Physics Faculty Publications

We have studied the production and annealing of defects produced by 1-MeV electron irradiation of n-type GaAs. Two of these defects lie at 0.15 and 0.31 eV from the conduction band, respectively; in addition, there is at least one acceptor much closer to the valence band. The carrier-removal rate depends upon sample purity but is independent of the irradiation flux. The removal rate is also highly dependent upon the position of the the Fermi level, an effect which is considered in some detail. At about 200°C, the defects recover in two stages, with the respective recovery rates given by λ …


Characterization Of Phase Transitions In Vanadium Deuterides, R. L. Tober, Gust Bambakidis Jan 1980

Characterization Of Phase Transitions In Vanadium Deuterides, R. L. Tober, Gust Bambakidis

Physics Faculty Publications

No abstract provided.