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Full-Text Articles in Physical Sciences and Mathematics
Amps-1d Modeling Of A-Si:H N^{+}-I-N^{+} Structure: The Validity Of Space Charge Limited Current Analysis, Aynur Eray, G. Nobile
Amps-1d Modeling Of A-Si:H N^{+}-I-N^{+} Structure: The Validity Of Space Charge Limited Current Analysis, Aynur Eray, G. Nobile
Turkish Journal of Physics
In this paper, the AMPS-1D (Analysis of Microelectronic and photonic structure) simulation program is used to understand the origin of the differences observed in Space Charge Limited Current (SCLC) analysis in thin and thick a-Si:H n^{ +} -i- n^{+} structure. For that purpose, the problem of applicability of SCLC measurements to n^{+}-i-n^{+} a-Si:H samples are investigated by using both the thin (0.3 \mu m) and thick (3 \mu m) samples. The simulation results show that activation energy in thick samples is larger than in thinner samples, which are an agreement with the experimental results. It is emphasized that this method …
Thermochemical And Green Luminescence Analysis Of Zinc Oxide Thin Films Grown On Sapphire By Chemical Vapor Deposition, Abdelkader Djelloul, R. A. Rabadanov
Thermochemical And Green Luminescence Analysis Of Zinc Oxide Thin Films Grown On Sapphire By Chemical Vapor Deposition, Abdelkader Djelloul, R. A. Rabadanov
Turkish Journal of Physics
This study has been carried out to detail an integral thermochemical analysis of the principal reaction in the production of zinc oxide (ZnO) thin films, including developing an analytical form of the equilibrium constant. Zinc oxide thin films prepared by chemical vapor deposition have been studied in terms of deposition time and substrate temperature. The growth of the single-crystal films present two regimes depending on the substrate temperature, with increasing constant growth rates at lower, and higher, temperature ranges, respectively. Growth rates above 6 \mu m \cdot min^{-1} can be achieved at T_s = 880 K. The variation of the …