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The Absorption Properties Of P-Type Tlin_X Ga_{(1-X)} Se_2 And Tlgase_2, Beki̇r Gürbulak, Muhammet Yildirim, Aytunç Ateş, Sebahatti̇n Tüzemen, Yahya Kemal Yoğurtçu

Turkish Journal of Physics

$p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5}Ga_{0.5}Se_2$ single crystals were grown by the modified Bridgman-Stockbarger method in our crystal growth laboratory. The absorption measurements were carried out on $p-TlIn_xGa_{(1-x)}Se_2$ samples in temperature range 10-300 K in steps of 10 K. The binding energies of $p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5} Ga_{0.5}$ $Se_2$ were obtained as \\ 35.0 meV, 16.5 meV and 14.5 meV, respectively. THe direct band gaps were calculated as 2.244 eV, 2.195 eV, 2.164 eV in $p-TlGaSe_2$, 2.158 eV, 2.131 eV, 2.098 eV in $p-TlIn_{0.3}Ga_{0.7}Se_2$, and 2.107 eV, 2.075 eV, 2.019 eV in $p-TlIn_{0.5}Ga_{0.5}Se_2$ respectively, at sample temperatures of 10 K, 140 K …