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TÜBİTAK

Turkish Journal of Physics

Journal

Binding energy

Publication Year

Articles 1 - 3 of 3

Full-Text Articles in Physical Sciences and Mathematics

Empirical Rule For The Pair Break Mechanism In Three-Quasiparticle Rotational Bands, Sukhjeet Singh Dhindsa, Sushil Kumar, Jatinder Kumar Sharma Jan 2013

Empirical Rule For The Pair Break Mechanism In Three-Quasiparticle Rotational Bands, Sukhjeet Singh Dhindsa, Sushil Kumar, Jatinder Kumar Sharma

Turkish Journal of Physics

An empirical rule on the basis of odd-even mass difference is suggested for the breaking of a proton pair or a neutron pair in odd-A nuclei to form a lower lying 3-quasiparticle state. If \Delta_p is smaller than \Delta_n, the proton pair breaks; on the other hand, if \Delta_n is smaller than \Delta_p, the neutron pair breaks down and forms a lower lying 3-quasiparticle state in an odd-A nuclide. This rule appears not only purely based on the proton paring/neutron pairing energy balancing condition but also on particular excitation energy, which is \ge 1 MeV in the case of the …


Exciton Investigations And The Urbach Tails Of Gd Doped And Undoped Gase, Beki̇r Gürbulak Jan 2001

Exciton Investigations And The Urbach Tails Of Gd Doped And Undoped Gase, Beki̇r Gürbulak

Turkish Journal of Physics

Absorption measurements were carried out in GaSe and GaSe:Gd samples in temperature range 10-320 K in steps 10 K. The first and the second (n=1 and n=2) excitonic levels were marked. The first exciton energies for n=1 were calculated as 2.118, 2.008 eV in GaSe, and 2.125, 2.006 eV in GaSe:Gd at 10, 320 K and respectively. The second exciton energies for n=2 were calculated as 2.140, 2.125 eV in GaSe at 10, 80 K and 2.141, 2.120 eV in GaSe:Gd at 10, 120 K and respectively. Binding energies of GaSe and GaSe:Gd were calculated as (29.46\pm 1 and 21.33\pm …


The Absorption Properties Of P-Type Tlin_X Ga_{(1-X)} Se_2 And Tlgase_2, Beki̇r Gürbulak, Muhammet Yildirim, Aytunç Ateş, Sebahatti̇n Tüzemen, Yahya Kemal Yoğurtçu Jan 2000

The Absorption Properties Of P-Type Tlin_X Ga_{(1-X)} Se_2 And Tlgase_2, Beki̇r Gürbulak, Muhammet Yildirim, Aytunç Ateş, Sebahatti̇n Tüzemen, Yahya Kemal Yoğurtçu

Turkish Journal of Physics

$p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5}Ga_{0.5}Se_2$ single crystals were grown by the modified Bridgman-Stockbarger method in our crystal growth laboratory. The absorption measurements were carried out on $p-TlIn_xGa_{(1-x)}Se_2$ samples in temperature range 10-300 K in steps of 10 K. The binding energies of $p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5} Ga_{0.5}$ $Se_2$ were obtained as \\ 35.0 meV, 16.5 meV and 14.5 meV, respectively. THe direct band gaps were calculated as 2.244 eV, 2.195 eV, 2.164 eV in $p-TlGaSe_2$, 2.158 eV, 2.131 eV, 2.098 eV in $p-TlIn_{0.3}Ga_{0.7}Se_2$, and 2.107 eV, 2.075 eV, 2.019 eV in $p-TlIn_{0.5}Ga_{0.5}Se_2$ respectively, at sample temperatures of 10 K, 140 K …