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A New Model Of Low Temperature Photoluminescence In Amorphous Semiconductors, Mathieu Kemp, Marvin Silver Jan 1995

A New Model Of Low Temperature Photoluminescence In Amorphous Semiconductors, Mathieu Kemp, Marvin Silver

Scanning Microscopy

Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the lifetime distribution, and a dependence of the efficiency on generation rate. These results contradict every existing model of amorphous semiconductor photoluminescence. The reason for the discrepancy is that every model predicts diffusive motion of the photo-generated pairs. We show how the inclusion of coulomb interaction between photocarriers, spin selection effects, and Auger recombination gives back agreement of theory with experiment. This new picture of the phenomenon also explains the transient behavior of the luminescence intensity.


Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski Apr 1986

Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski

Nancy A. Burnham

Auger electron spectroscopy line‐shape analysis of the Si‐L 2 3 V V peak has been performed on hydrogenated amorphous silicon (a‐Si:H). Both a‐Si:H produced by hydrogen implantation of siliconsingle crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 101 6–102 2 cm− 3 were evaluated. Correlations between the area under the deconvoluted L 2 3 V V transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using …