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Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer
Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer
Legacy Theses & Dissertations (2009 - 2024)
CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, α-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes …
Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins
Extreme Ultraviolet Photoresists : Film Quantum Yields And Ler Of Thin Film Resists, Craig D. Higgins
Legacy Theses & Dissertations (2009 - 2024)
Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This …