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Full-Text Articles in Nanoscience and Nanotechnology
Detection Of Subsurface, Nanometer-Scale Crystallographic Defects By Nonlinear Light Scattering And Localization, Farbod Shafiei, Tommaso Orzali, Alexey Vert, Mohammad-Ali Miri, Pui Yee Hung, Man Hoi Wong, Andrea Alù, Gennadi Bersuker, Michael C. Downer
Detection Of Subsurface, Nanometer-Scale Crystallographic Defects By Nonlinear Light Scattering And Localization, Farbod Shafiei, Tommaso Orzali, Alexey Vert, Mohammad-Ali Miri, Pui Yee Hung, Man Hoi Wong, Andrea Alù, Gennadi Bersuker, Michael C. Downer
Publications and Research
Heteroepitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their heterointerfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical/optical performance of devices. Diagnosis of subsurface defects traditionally requires time-consuming invasive techniques such as cross-sectional transmission electron microscopy. Using III–V films grown on Si, noninvasive, bench-top diagnosis of subsurface defects have been demonstrated by optical second-harmonic scanning probe microscope. A high-contrast pattern is observed of subwavelength “hot spots” caused by scattering and localization of fundamental light by defect scattering sites. Size …
Highly Effective Geni Alloy Contact Diffusion Barrier For Bisbte Long-Term Thermal Exposure, Erdong Song, Brian S. Swartzentruber, Chowdary R. Koripella, Julio A. Martinez
Highly Effective Geni Alloy Contact Diffusion Barrier For Bisbte Long-Term Thermal Exposure, Erdong Song, Brian S. Swartzentruber, Chowdary R. Koripella, Julio A. Martinez
Publications and Research
A GeNi alloy diffusion barrier for contacts on bismuth antimony telluride is proposed. Multiple gold contact diffusion barriers were tested at different thermal aging conditions in air and reducing atmospheres. Among all diffusion barriers, the GeNi alloy barrier shows the best performance for bulk samples with no substantial degradation of the contact resistance, no contact color change, and no change of thermoelectric properties. We observed DAu−GeNi = (9.8 ± 2.7) × 10−20 m2/s within the GeNi alloy barrier, which is 4 times smaller than DAu−BiSbTe. The presence of the initial Ge layer also proves to be effective in reducing nickel …
Molecular Helices As Electron Acceptors In High-Performance Bulk Heterojunction Solar Cells, Yu Zhong, M. Tuan Trinh, Rongsheng Chen, Geoffrey E. Purdum, Petr P. Khlyabich, Melda Sezen, Seokjoon Oh, Haiming Zhu, Brandon Fowler, Boyuan Zhang, Wei Wang, Chang-Yong Nam, Matthew Y. Sfeir, Charles T. Black, Michael L. Steigerwald, Yueh-Lin Loo, Fay Ng, X.-Y. Zhu, Colin Nuckolls
Molecular Helices As Electron Acceptors In High-Performance Bulk Heterojunction Solar Cells, Yu Zhong, M. Tuan Trinh, Rongsheng Chen, Geoffrey E. Purdum, Petr P. Khlyabich, Melda Sezen, Seokjoon Oh, Haiming Zhu, Brandon Fowler, Boyuan Zhang, Wei Wang, Chang-Yong Nam, Matthew Y. Sfeir, Charles T. Black, Michael L. Steigerwald, Yueh-Lin Loo, Fay Ng, X.-Y. Zhu, Colin Nuckolls
Publications and Research
Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed …