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Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz Aug 2021

Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz

Dissertations

Colloidal quantum dot (CQD) photodetectors are a rapidly emerging technology with a potential to significantly impact today’s infrared sensing and imaging technologies. To date, CQD photodetector research is primarily focused on lead-chalcogenide semiconductor CQDs which have spectral response fundamentally limited by the bulk bandgap of the constituent material, confining their applications to near-infrared (NIR, 0.7-1.0 um) and short-wavelength infrared (SWIR, 1-2.5 um) spectral regions. The overall goal of this dissertation is to investigate a new generation of CQD materials and devices that advances the current CQD photodetector research toward the technologically important thermal infrared region of 3-5 ?m, known as …


Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui May 2021

Optical Engineering Of Iii-Nitride Nanowire Light-Emitting Diodes And Applications, Ha Quoc Thang Bui

Dissertations

Applications of III-nitride nanowires are intensively explored in different emerging technologies including light-emitting diodes (LEDs), laser diodes, photodiodes, biosensors, and solar cells. The synthesis of the III-nitride nanowires by molecular beam epitaxy (MBE) is investigated with significant achievements. III-nitride nanowires can be grown on dissimilar substrates i.e., silicon with nearly dislocation free due to the effective strain relaxation. III-nitride nanowires, therefore, are perfectly suited for high performance light emitters for cost-effective fabrication of the advanced photonic-electronic integrated platforms. This dissertation addresses the design, fabrication, and characterization of III-nitride nanowire full-color micro-LED (µLED) on silicon substrates for µLED display technologies, high-efficient …