VLSI and Circuits, Embedded and Hardware Systems Commons^™

Modeling Of Sic P-Channel Insulated Gate Bipolar Transistors (Igbts), Mahmood Saadeh

Graduate Theses and Dissertations

A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or silicon carbide (SiC) devices. The model accurately predicts the steady-state output, transfer and switching characteristics of the IGBT under a variety of different conditions. This is the first IGBT model to predict the behavior of p-channel SiC IGBTs. Previous work on IGBT models has focused on Si n-channel IGBTs [1-3]. This unified model is not limited to SiC p-channel IGBTs; the user has the option to select between Si or SiC, and n-channel or p-channel, making it the first IGBT model that captures the …