VLSI and Circuits, Embedded and Hardware Systems Commons^™

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Experimental Study And Modeling Of The Gm-I Dependence Of Long-Channel Mosfets, Michael Fong Cheng

Master's Theses

This thesis describes an experimental study and modeling of the current-transconductance dependence of the ALD1106, ALD1107, and CD4007 arrays. The study tests the hypothesis that the I-gm dependence of these 7.8 µm to 10 µm MOSFETs conforms to the Advanced Compact Model (ACM). Results from performed measurements, however, do not support this expectation. Despite the relatively large length, both ALD1106 and ALD1107 show sufficiently pronounced ‘short-channel’ effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-gm dependence with sub-28% maximum error …