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High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
Graduate Theses and Dissertations
Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.
This dissertation work aims to explore the possibilities in high temperature …
Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman
Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman
Doctoral Dissertations
Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We …