VLSI and Circuits, Embedded and Hardware Systems Commons^™

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow

Graduate Theses and Dissertations

The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity …

Design And Test Of A Gate Driver With Variable Drive And Self-Test Capability Implemented In A Silicon Carbide Cmos Process, Matthew Barlow

Graduate Theses and Dissertations

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

The primary requirement to ensure rapid switching of power MOSFETs was a gate …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez

Graduate Theses and Dissertations

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …

High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman

Graduate Theses and Dissertations

Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.

This dissertation work aims to explore the possibilities in high temperature …

Design, Simulation And Implementation Of Three-Phase Bidirectional Dc-Dc Dual Active Bridge Converter Using Sic Mosfets, Tariq Aldawsari

Graduate Theses and Dissertations

The use of SiC-based martials in fabricating power semiconductor devices has shown more interest than conventional silicon-based. Its promising abilities to improve the performance of power electronic systems made it a valuable choice in building high power DC-DC converters. This thesis presents the design and implementation of a three-phase bidirectional DC-DC Dual Active Bridge using SiC MOSFETs. The proposed circuit is first built in Matlab for simulation analysis. Then a phase shift modulation controller is designed in Simulink to test the simulation circuit. The controls are then integrated through an FPGA to test the prototype. Simulations and experimental results are …

Design Of A High Performance Silicon Carbide Cmos Operational Amplifier, Shaila Amin Bhuyan

Graduate Theses and Dissertations

This thesis presents the design, simulation, layout and test results of a silicon carbide (SiC) CMOS two-stage operational amplifier (op amp) with NMOS input stage. The circuit has been designed to provide a stable open-loop voltage gain (60 dB), unity-gain bandwidth (around 5 MHz) and maintain a high CMRR and PSRR within a useful input common mode range over process corners and a wide temperature range (25 °C - 300 °C). Between the two stages a Miller compensation topology is placed to improve the phase margin (around 45°). Due to the comparatively high threshold voltage values of transistors in SiC, …

The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger

Graduate Theses and Dissertations

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.

In this dissertation, the author discusses the …

Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair

Graduate Theses and Dissertations

As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures require substantially less power, generate less noise, and produce less electromagnetic interference (EMI). This dissertation develops the Delay Insensitive Ternary Logic (DITL) asynchronous design paradigm that combines the designs aspects of similar Dual-Rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme.

DITL is designed at the transistor level using multi-threshold CMOS and carbon nanotube (CNT) FETs to develop …