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Junction Temperature Estimation Of Silicon Carbide Power Module Using Internal Gate Resistance As Temperature Sensitive Electrical Parameter, Michael Sykes
Graduate Theses and Dissertations
The junction temperature of a power module is measured non-intrusively and uninterrupted in its application by analyzing the dependency of gate resistance to temperature. The circuit configuration proposed consists of altering the gate loop path and adding a basic peak detection circuit with an added low-pass filter to accurately measure the small differences seen during a temperature change on the internal gate resistance. The testing on this Silicon Carbide power module shows that the internal gate resistance has a positive temperature coefficient. This causes the current and the voltage drop on the gate loop sensing resistance to reduce as the …