Electrical and Computer Engineering Commons^™

Carrier Velocity In Inaln/Aln/Gan Heterostructure Field Effect Transistors On Fe-Doped Bulk Gan Substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

Electrical and Computer Engineering Publications

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.