Open Access. Powered by Scholars. Published by Universities.®
Electrical and Computer Engineering Commons™
Open Access. Powered by Scholars. Published by Universities.®
Electrical and Computer Engineering Publications
Charge injection; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; photoluminescence
Articles 1 - 1 of 1
Full-Text Articles in Electrical and Computer Engineering
On Carrier Spillover In C- And M-Plane Ingan Light Emitting Diodes, J. Lee, X. Li, X. Ni, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, K. R. Evans
On Carrier Spillover In C- And M-Plane Ingan Light Emitting Diodes, J. Lee, X. Li, X. Ni, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, K. R. Evans
Electrical and Computer Engineering Publications
The internal quantum efficiency(IQE) and relative external quantum efficiency (EQE) in InGaNlight-emitting diodes(LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane GaN were investigated in order to shed some light on any effect of polarizationcharge induced field on efficiency killer carrier spillover. Without an EBL the EQE values suffered considerably (by 80%) for both orientations, which is clearly attributable to carrier spillover. Substantial carrier spillover in both polarities, therefore, suggests that the polarizationcharge is not the major factor in efficiency degradation observed, particularly at high injection levels. Furthermore, the m-plane variety with …