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Full-Text Articles in Electrical and Computer Engineering
The Mechanism Of Electroforming Of Metal Oxide Memristive Switches, Jianhua Yang, Feng Miao, Matthew Pickett, Douglas Ohlberg, Duncan Stewart, Chun Ning Lau, R Stanley Williams
The Mechanism Of Electroforming Of Metal Oxide Memristive Switches, Jianhua Yang, Feng Miao, Matthew Pickett, Douglas Ohlberg, Duncan Stewart, Chun Ning Lau, R Stanley Williams
Electrical and Computer Engineering Faculty Publication Series
Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields—through ‘electroforming’ or ‘breakdown’—critically affecting CMOS (complementary metal–oxide–semiconductor) logic,DRAM (dynamic random access memory) and flash memory, and tunnel barrier oxides. An initial irreversible electroforming process has been invariably required for obtaining metal oxide resistance switches, which may open urgently needed new avenues for advanced computer memory and logic circuits including ultra-dense non-volatile random access memory (NVRAM) and adaptive neuromorphic logic circuits. This electrical switching arises from the coupled motion of electrons and ions within the oxide material, as one of the first recognized …
A Family Of Electronically Reconfigurable Nanodevices, Jianhua Yang, Julien Borghetti, David Murphy, Duncan Stewart, R Stanley Williams
A Family Of Electronically Reconfigurable Nanodevices, Jianhua Yang, Julien Borghetti, David Murphy, Duncan Stewart, R Stanley Williams
Electrical and Computer Engineering Faculty Publication Series
AFM image of 17 nanodevices with a zoom-in cartoon schematically shows an individual crosspoint device consisting of two Pt metal electrodes separated by a TiO2 bi-layer memristive material. By applying an electric field across the memristive material, oxygen vacancies can drift up and down, leading to four current-transport end-states. The switching between these end-states results in a family of nanodevices.