Electrical and Computer Engineering Commons^™

A Non-Vacuum Process For Preparing Nanocrystalline Cuin1−XGaXSe2 Materials Involving An Open-Air Solvothermal Reaction, J. Olejníček, Chad A. Kamler, A. Mirasano, A. L. Martinez-Skinner, M. A. Ingersoll, C. L. Exstrom, S. A. Darveau, J. L. Huguenin-Love, M. Diaz, Natale J. Ianno, Rodney J. Soukup

Department of Electrical and Computer Engineering: Faculty Publications

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn_1−xGa_xSe₂ (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu …