Electrical and Computer Engineering Commons^™

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al_0.22In_0.02Ga_0.76N/Al_0.38In_0.01Ga_0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×10¹⁷ cm⁻³ and the Hall mobility was up to 40 cm²/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

Microcavity Surface Emitting Laser, Stewart Feld, John P. Loehr, James A. Lott

AFIT Patents

A three-dimensional waveguiding structure for a microcavity surface-emitting laser is described in which native aluminum oxide layers provide control of intracavity waveguiding and the laser optical mode structure of the emitted beam. Microcavity lasers described herein account for the blueshift of the emission wavelength as the laser lateral dimensions are reduced to or below the emission wavelength.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10⁻⁶ Ω cm² and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×10¹⁸ cm⁻³ were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang

Faculty Publications

We have performed variable-temperature multimode quantitative microwavemicroscopy of in situepitaxial Ba_1−xSr_xTiO₃ thin-film composition spreads fabricated on (100) LaA₁O₃ substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO₃ to SrTiO₃. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba_1−xSr_xTiO₃ at microwave frequencies.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …