Structural Engineering Commons^™

Study About High Influence Doping To Base Resistance And Bandgap Narrowing At Si/Si1-Xgex/Si Heterojunction Bipolar Transistor, Achmad Fadhol

Makara Journal of Technology

Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor. Heterojunction is a link formed bedween two semiconductor materials and differend bandgap which has thinness under 50nm and grow the mixture of plate SiGe as bases. The link is an abrupt link or graded one. In this research learnt formulation of doping concentration influence to basis resistance and bandgap narrowing through Si/Si1-xGex/Si Heterojunction Bipolar Transistor with abrupt emitter-basis link, besides taking care to mobility and basis wide to basis resistance, it is also influence of mole fraction to bandgap power. From the result shows …