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Full-Text Articles in Engineering
Multifunctional Properties Of Gan Nws Applied To Nanometrology, Nanophotonics, And Scanning Probe Microscopy/Lithography, Mahmoud Behzadirad
Multifunctional Properties Of Gan Nws Applied To Nanometrology, Nanophotonics, And Scanning Probe Microscopy/Lithography, Mahmoud Behzadirad
Optical Science and Engineering ETDs
GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical bandgap. Recent researches have shown superior mechanical properties of GaN nanowires which promises their use in new research areas e.g. nanometrology. In this work, we develop a scalable two-step top-down approach using interferometric lithography as well a bottom-up growth of NWs using MOCVD, to manufacture highly-ordered arrays of nanowires with atomic surface roughness and desired aspect-ratios to be used in nanophotonics and atomic precision metrology and lithography. Using this method, uniform nanowire arrays were achieved over large-areas (~1 mm2) with aspect-ratio …
Modeling Multiphase Flow And Substrate Deformation In Nanoimprint Manufacturing Systems, Andrew Cochrane
Modeling Multiphase Flow And Substrate Deformation In Nanoimprint Manufacturing Systems, Andrew Cochrane
Nanoscience and Microsystems ETDs
Nanopatterns found in nature demonstrate that macroscopic properties of a surface are tied to its nano-scale structure. Tailoring the nanostructure allows those macroscopic surface properties to be engineered. However, a capability-gap in manufacturing technology inhibits mass-production of nanotechnologies based on simple, nanometer-scale surface patterns. This gap represents an opportunity for research and development of nanoimprint lithography (NIL) processes. NIL is a process for replicating patterns by imprinting a fluid layer with a solid, nano-patterned template, after which ultraviolet cure solidifies the fluid resulting in a nano-patterned surface. Although NIL has been demonstrated to replicate pattern features as small as 4 …