Engineering Commons^™

Measurements Of 11B(P,P)11B And 11B(P,Alpha)8Be With Polarized Protons, Thomas Lewis

The Corinthian

The vector analyzing powers, Ay(theta, E), of the 11B(p,p)11B and 11B(p,alpha)8Be reactions were measured as a function of angle and energy as a part of a program to study the reaction 11B(p,alpha)2alpha. The experiment was performed at the Triangle Universities Nuclear Laboratory at Duke University, where the polarized proton beams between 100 nA and 600 nA with energies (Ep) of 2.65, 3.9, 4.0, 5.11, and 5.5 MeV were produced using the ABPIS source and the FN tandem. These energies were selected to be on (and off) several of the known resonances in this region. The target was composed of 35 …

Assembly And Function Of Myosin Ii On Ultraviolet/Ozone Patterned Trimethylchlorosilane Substrates, Madhukar B. Kolli

Theses, Dissertations and Capstones

The exploration of biomolecular motors in nanotechnological applications has generated much interest in the scientific community. Although the recent progress has been very promising, several requirements have yet to be fulfilled in order for motor proteins to be useful in nanotechnological applications. Here, we present a simple method for patterning myosin II on a microstructured surface. Our findings indicate that UV/ozone treatment can be used to alter the hydrophobicity of trimethyl-chloro-silane (TMCS) coated glass surfaces, to alter protein binding, and effectively produce localized motor activity. Taken together, these data suggest that photoreactive patterning may be useful for the selective localization …

Engineering At San Jose State University, Winter 2008, San Jose State University, Charles W. Davidson College Of Engineering

Engineering at San Jose State University

No abstract provided.

Pid Parameter Optimization Of An Uav Longitudinal Flight Control System, Kamran Turkoglu, Ugur Ozdemir, Melike Nikbay, Elbrous Jafarov

Faculty Publications

In this paper, an automatic control system design based on Integral Squared Error (ISE) parameter optimization technique has been implemented on longitudinal flight dynamics of an UAV. It has been aimed to minimize the error function between the reference signal and the output of the plant. In the following parts, objective function has been defined with respect to error dynamics. An unconstrained optimization problem has been solved analytically by using necessary and sufficient conditions of optimality, optimum PID parameters have been obtained and implemented in control system dynamics.

A Method For Determining Stokes Flow Around Particles Near A Wall Or In A Thin Film Bounded By A Wall And A Gas-Liquid Interface, Ashok S. Sangani, Shailesh S. Ozarkar

Biomedical and Chemical Engineering - All Scholarship

A method for determining Stokes flow around particles near a wall or in a thin film bounded by a wall on one side and a nondeformable gas-liquid interface on the other side is developed. The no-slip boundary conditions at the wall are satisfied by constructing an image system based on Lamb’s multipoles. Earlier results for the image systems for the flow due to a point force or a force dipole are extended to image systems for force or source multipoles of arbitrary orders. For the case of a film, the image system consists of an infinite series of multipoles on …

A Kinetic Theory For Particulate Systems With Bimodal And Anisotropic Velocity Fluctuations, Ashok S. Sangani, Shailesh S. Ozarkar, Volodymyr I. Kushch, Donald L. Koch

Biomedical and Chemical Engineering - All Scholarship

Observations of bubbles rising near a wall under conditions of large Reynolds and small Weber numbers have indicated that the velocity component of the bubbles parallel to the wall is significantly reduced upon collision with a wall. To understand the effect of such bubble-wall collisions on the flow of bubbly liquids bounded by walls, a model is developed and examined in detail by numerical simulations and theory. The model is a system of bubbles in which the velocity of the bubbles parallel to the wall is significantly reduced upon collision with the channel wall while the bubbles in the bulk …

A Comparison Of Marching-On In Time Method With Marching-On In Degree Method For The Tdie Solver, Baek Ho Jung, Z. Ji, T. K. Sarkar, M. Salazar-Palma, M. Yuan

Electrical Engineering and Computer Science - All Scholarship

One of the most popular methods to solve a time-domain integral equation (TDIE) is the marching-on in time (MOT) method. Recently, a new method called marching-on in degree (MOD) that uses Laguerre polynomials as temporal basis functions has been developed to eliminate the late time instability of the MOT method. The use of an entire domain basis for the time variable eliminates the requirement of a Courant condition, as there is no time variable involved in the field calculation. This is possible as in the procedure the time and the space variables can be separated analytically. A comparison is presented …

Color Filter Array Image Analysis For Joint Denoising And Demosaicking, Keigo Hirakawa

Electrical and Computer Engineering Faculty Publications

Noise is among the worst artifacts that affect the perceptual quality of the output from a digital camera. While cost-effective and popular, single-sensor solutions to camera architectures are not adept at noise suppression. In this scheme, data are typically obtained via a spatial subsampling procedure implemented as a color filter array (CFA), a physical construction whereby each pixel location measures the intensity of the light corresponding to only a single color. Aside from undersampling, observations made under noisy conditions typically deteriorate the estimates of the full-color image in the reconstruction process commonly referred to as demosaicking or CFA interpolation in …

Investigation Of Microplasma Cells Fabricated On Silicon Wafer, Koffi Abalo-Akuvi

Journal of the Microelectronic Engineering Conference

The objective of this project was to investigate the possibility of producing array of microplasma, having aluminum and silicon electrodes, and oxide as a dielectric with cavity size as large as 30x30 μm². One of the potential applications among many was to use such device as a photodector. A new class of photodectors, hybrid semiconductor-microplasma devices, to exhibit photoresponsivities in the visible and near infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes [1]. After fabrication processing, the route causes of failure were determined. Processing problems were diagnosed and …

Theoretical Study And Device Modeling Of Iii-V Nanostructured Photovoltaics, Ryan Aguinaldo

Journal of the Microelectronic Engineering Conference

A methodology for the modeling and theoretical analysis of novel nanostructured photovoltaic devices is presented in this work. The nanostructures in consideration are quantum wells and quantum dots composed of 111-V materials. Their incorporation into the space charge region of an otherwise conventional solar cell is presented as a means to increase photovoltaic energy conversion efficiency. The enhancement for both single- and multi-junction solar cells is also outlined. Limitations of the available models are briefly discussed. Analyzed results allow for the further optimization of these novel devices.

Developing An Empirical Model For Tunable Porosity In Porous Nanocrystalline Silicon Membranes, Jon-Paul S. Desormeaux

Journal of the Microelectronic Engineering Conference

In this study, a new process for the fabrication of porous nanocrystalline silicon (pnc-Si) membranes is proposed, and the early stages in the development of an empirical, stressbased model for tunable porosity are revealed. Pnc-Si membranes that were fabricated by the proposed process showed substantial improvements in membrane morphology, i.e., porosity and pore uniformity across the wafer. These improvements were assumed to be related to stress, as suggested by the addition of materials that differ in Young’s Modulus and in coefficients of thermal expansion. In order to explore this assumption, stress measurements were conducted via stylus trace on a Tencor …

Deep Submicron Pattern Formation For Selective Epitaxial Growth Of Ii-V Semiconductors, Kenny Fourspring

Journal of the Microelectronic Engineering Conference

In the world of optoelectronics a common barrier has been integrating logic and device circuits on a single substrate, as it was generally only possible to optimize the device for the logic, or the optoelectronic device at hand. However, a new approach that uses metal organic chemical vapor deposition (MOCVD) enables the growth of Ill-V semiconductors on silicon substrates. The fact that 111-V semiconductors can now be integrated within the current silicon CMOS processes may allow new possibilities. An approach to investigate the feasibility of this process has been investigated. The enabler to integrate HI-V is an innovative approach called …

Fabrication Of Metal-High-K Capacitors On Germanium (May 2008), Rahul K. Gupta

Journal of the Microelectronic Engineering Conference

The objective of this study is to gain understanding of MOS devices built on germanium. Ge PMOS transistors were simulated using Silvaco. MOS capacitors have been fabricated using hafnium oxide, a high-K dielectric, and molybdenum, a metal gate. The capacitance-voltage (CV) characteristics of the devices were obtained and studied. During the deposition of hafnium oxide on germanium substrate, the surface integrity plays a significant role. Two different surface treatments for the Ge substrates were implemented: one with NH₃ immersion at 650°C for one minute, the other with a deionized (DI) water rinse for one minute. In doing so, one …

Fabrication Of An Esaki Tunneling Diode By Proximity Rapid Thermal Diffusion, Sankar Krishnan

Journal of the Microelectronic Engineering Conference

Tunnel diodes need degenerately doped junction to optimum performance. They are fabricated using the Molecular Beam Epitaxial method. This method yields good degenerately doped junctions. However it is not clear whether the process can be used with 300 mm wafer technology due to the demand for a high thermal budget. Proximity Rapid Thermal Diffusion (PRTD) uses the RTP tool for its thermal processing. The amount of time used for the processing is in seconds which yields to a low thermal budget. Moreover RTP tools are a common place in the industry and hence comparatively, PRTD is easy to integrate into …

Double Patterning Technique Using An Aluminum Hardmask, Brian Lindenau

Journal of the Microelectronic Engineering Conference

The goal of this project was to successfully demonstrate a double patterning technique using equipment available at the SMFL at RIT. Traditional methods of increasing resolution have been essentially exhausted; therefore new methods of increasing resolution are needed. One of these new methods is double patterning, which splits a dense pattern into two less dense patterns which are imaged in two steps, thereby reducing imaging constraints. Overall a proof of concept of the double patterning process was achieved. Imaging of 0.5 μm drawn features was demonstrated, resulting in 0.3 μm post-etch.

Process Development For The Fabrication Of A Double-Sided Photodiode, Kimberly E. Manser

Journal of the Microelectronic Engineering Conference

Given a cross-section and functionality requirements for a photodiode designed for application as the focal plane array on SNAP (SuperNova Acceleration Probe), a proposed satellite in the Joint Dark Energy Mission by NASA and the DOE, a process has been developed to fabricate the device in the most efficient and reliable manner. The photodector is to be hybridized with a ROIC (Read-Out Integrated Circuit) that interprets the individual pixel signals and converts the electrical information into an image. After several versions of the process based on simulations, efficiency of sequence, and research, a test run of key process steps was …

Three Dimensional Nanochannel Formation By Reflective Interference Lithography, Michael Many

Journal of the Microelectronic Engineering Conference

An imaging technique using TM polarized illumination at 45 degree incidence to a highly reflective surface has been demonstrated possible. The imaging technique was able to produce a single row of over exposed nanochannels. Further experimentation will be required to develop a stable process where multiple rows of channels can be formed. Once the optimal process is determine, experimentation can be designed to create either or both photonic crystal structures and a pitch doubling technique.

Germanium Esaki Diodes By N-Type In-Situ Doping, Amy Miller

Journal of the Microelectronic Engineering Conference

A rapid melt growth process is performed in the formation of Esaki tunnel junctions on in-situ n-doped germanium on silicon substrates. An aluminum-silicon alloy is used as the p-dopant for the junctions as well as an ohmic contact for testing. The rapid thermal anneal (RTA), used for the incorporation of the aluminum-silicon, is characterized by varying ramp rate and peak anneal temperatures. It is found that peak anneal temperature is the dominant factor affecting the current density through the devices. The maximum current density recorded is 2098mA/cm2 at a peak anneal temperature of 620°C.

Active Matrix Polymer Cholesteric Liquid Crystal Display (May 2008), G B. Myhre, J P. Cox, K L. Marshall, T Z. Kosc, C A. Fromem, S D. Jacobs

Journal of the Microelectronic Engineering Conference

Polymer cholesteric liquid crystal display technology has been demonstrated previously on single pixel monolithic displays at the University of Rochester’s Lab for Laser Energetics. Mass reorientation of PCLC flakes in a variety of host fluids has been modeled and observed. However, a pixilated PCLC display has never been demonstrated. The motive of the project was to create a prototype pixilated PCLC display in order to demonstrate the commercial viability of the technology. An active matrix back plane was designed, fabricated, tested, and incorporated with the existing PCLC display technology. The resulting display showed strong isolation between pixels with negligible cross …

Integrated Thin Film Crystalline Silicon Photoactive Components, Isaac Onigman

Journal of the Microelectronic Engineering Conference

Single crystal silicon photoactive devices using a low-temperature thin-film transistor (TFT) compatible process were designed and manufactured on bulk silicon and silicon-on-insulator (SOT) substrates at the Semiconductor and Microsystems Fabrication Laboratory (SMFL) at RIT. Photodiodes and phototransistors designed with transparent indium-tin oxide (ITO) gates, along with n-type and p-type ITO Schottky test devices were manufactured and investigated. Possible applications for devices investigated here include ondisplay photodetectors, on-display digital logic and possible integration into touchscreen or lightpen sensitive liquid crystal TFT displays.

The photoactive devices were integrated in active pixel sensor (APS) arrangements to determine feasibility of integration into large-field SOT …

Reclaimed Silicon Solar Cells, Victor Prajapati

Journal of the Microelectronic Engineering Conference

Fully processed CMOS Si wafers were reclaimed to make solar cells, while ensuring an acceptable efficiency loss of 15%. This project successfully developed a wafer reclaim process coupled with a solar cell fabrication process. The optimum efficiency obtained was 12.4% using prime wafers and surface texturing, while comparably processed reclaimed wafers were able to achieve 10.5% efficiency.

Thermal Sio2 Growth Rate Enhancement At Low Temperature Using An Nf3 Additive, Ryan D. Rettmann

Journal of the Microelectronic Engineering Conference

Thermally grown silicon oxide growth enhancement using small amounts of NF₃ was investigated, examining both growth rate and interface quality. Low temperature results showed noted growth rate enhancement at temperatures above 7000 C. Interface quality showed significant improvement. Further enhancement is expected through modified chamber and equipment design.

Fabrication Of Thermally Actuated Micromirror Using Cmos Compatible Surface Mems Process With Xef2 Release Etch, Christopher G. Shea

Journal of the Microelectronic Engineering Conference

Thermally actuated micromirrors were fabricated to demonstrate a CMOS compatible surface micromachined MEMs process that was developed. A key step in the process was the used of a XeF₂ etch to release the structures. A design was created that varied key factors including mirror pad size and number of anchors. For the smallest pads attached by a single anchor, the length and width was varied. The release etch was found to require a sacrificial layer of greater than one micron for fest lateral undercutting. Mirrors with the longest and narrowest necks were found to display the greatest deflection.

Process Characterization For Integration Of Esaki Diodes Into Aspect Ratio Trapping Material, Stuart A. Sieg

Journal of the Microelectronic Engineering Conference

A process for forming Esaki Diodes in Germanium bulk material was characterized. In doing so its processing characteristics were studied to determine whether it could be transferred into Aspect Ratio Trapping, ART, material. It was determined that transfer was feasible with the optimization of the spin on dopant process and strict control of the wet etching of the spin on dopant and Aluminum. Following process characterization electrical data was collected for a range of devices with varying process parameters. The maximum peak to valley current ratio was 1.5 and maximum peak current density was 5kA/cm². The PVCR value …

Biomedical Lance Ion Sensitive System, Charles D. Sturdevant

Journal of the Microelectronic Engineering Conference

The fabrication of a pH sensor which can be used in practical applications in biological and niedical fields was designed and manufactured using a new lance style ion sensitive field effect transistor. The lance can be used to measure pH levels in micro biological cultures without disruption of the culture and can be a powerful tool in real time Invitro medical diagnostics tool.

The reference electrode can be placed onto the chip by depositing a noble metal contact in the field region. This is referred as a Pseudo Reference Electrode, PRE. By bringing the PRE design closer to the membrane, …

Characterization Of P-N Junctions For Variation In Dose And Annealing Temperatures (May 2008), Ryan Sweeney

Journal of the Microelectronic Engineering Conference

The following experiment was completely in order to analyze and quantify the influence implantation dose and post implant anneal conditions have on the source and drain regions of a typical transistor. A DOE experiment was designed to investigate three different variations in each the implantation dose and post implant anneal temperatures of the source and drain regions of the advanced CMOS process transistor at RIT. Electrical characterization was used to obtain quantifiable results for each experimental variation. The experiment was successful in manufacturing a complete analysis for variations in the source and drain doping profile.

Fabrication Of Aligned Metallic Structures Based On Block Copolymer Lithography, Yusuke Takahashi

Journal of the Microelectronic Engineering Conference

The objective of this project is to fabricate linear metallic patterns based on block copolymer lithography. As the semiconductor industry continue to seek scaling methods, the next breakthroughs in the electronics size barrier are likely to come from devices created out of novel material. Block copolymers have grained considerable potential for nanoelectronics applications such as lithography templates due to its incompatible components self-assemble into well-ordered structures with the scale of 10 to 100nm. In this project, creation of nano-scale structures was attempted via graphoepitaxy, a process where topographically patterned substrate is utilized to control crystallographic orientations. Linear structures of diblock …

Electrolysis-Bubble-Actuated Micropump, Suyana L. Villarroel

Journal of the Microelectronic Engineering Conference

An electrolysis-bubble-actuated micro pump is created. The pump is created with a top surface gradient across the channel. This changing gradient will help to propel the bubble, created by electrolysis, forward. This micropump is implemented by taking advantage of both surface tension effect and the electrolysis actuation. The surface tension effect is controlled via the periodic generation of electrolytic bubbles and the roughness gradient design of the microchannel surface. The fabrication of the device was completed following the processes outlined in the design phase. Adhesion problems between the top surface and the silicon substrate were encountered during testing. As result, …

Surface Micro-Machined Capacitive Pressure Sensor, Scott Raguse

Journal of the Microelectronic Engineering Conference

This project entailed the design, fabrication, and testing of a surface micro-machined electret pressure sensor with the possible use as a microphone. The design is based on a capacitance electret microphone. This type of microphone uses a plate that has a built in charge to provide the bias of the system. This eliminates any external bias directly attached to the sensor. The surface micro-machining means that no backside etch is required to form the membrane. Without the backside etch the process can be integrated with a CMOS process much more easily. This electret pressure sensor uses a poly-silicon floating gate …

Development Of A Linear-Source, Atmospheric-Pressure Rf Glow Discharge Plasma, Andrew J. Wagner

Journal of the Microelectronic Engineering Conference

A linear-source, atmospheric-pressure RF glow discharge plasma has been designed, fabricated, and analyzed. The RIT atmospheric-pressure plasma (RITAPP) consists of two parallel-plate electrodes separated by a 1.2 mm gap. Helium is flown through the gap, exiting the slit and impinging a substrate. 13.56 MHz RF power is applied to one electrode, resulting in a non-thermal plasma with a gas temperature (T_g) between 50 and 150 °C. Optical emission spectroscopy was used to determine spectral radiation in the UV-Vis region of helium and helium/oxygen plasmas. Singlet and triplet helium emissions as well as numerous 0, H, and OH peaks …