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Guard-Ring Electrode Effects On Crosstalk In Simulated 2d Cmos Compatible Vertical Photodiode Pixel Arrays, Paul Jansz-Dravetzky, Steven Hinckley
Guard-Ring Electrode Effects On Crosstalk In Simulated 2d Cmos Compatible Vertical Photodiode Pixel Arrays, Paul Jansz-Dravetzky, Steven Hinckley
Research outputs pre 2011
In this study, we have simulated the electrical crosstalk in back-illuminated and front-illuminated photodiode arrays as a function of substrate thickness and junction depth for single junction photodiode pixels, with and without guard-ring electrodes. The physical mechanisms responsible for electrical crosstalk suppression are explained using an absorption volume proportion concept. The results obtained show that significant crosstalk suppression can be achieved for back-illuminated thin substrate guarded-pixel arrays