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Design Of A Sigma-Delta Adc In 65nm Cmos Process, Michael Lee Thompson Iii
Design Of A Sigma-Delta Adc In 65nm Cmos Process, Michael Lee Thompson Iii
Electrical Engineering Undergraduate Honors Theses
Analog and digital signals both play a vital role in electrical engineering and the technology of today. As the role of electrical and computer engineers becomes more deeply involved in the development of new technology, an understanding of how these signals are utilized, and what they represent, is a necessity. Due to the inherent limitations involved with analog signals, there is a need for these signals to be accurately and efficiently converted to digital signals for processing. The job of the analog-to-digital converter, or ADC, is to receive this analog input signal (voltage or current) and create a digital representation …
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Graduate Theses and Dissertations
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …
Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi
Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi
Graduate Theses and Dissertations
The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to automotive, space exploration, aerospace, deep well drilling, and gas turbines. A significant issue with the high-temperature operation is the exponential increase in leakage current. The lower intrinsic carrier concentration of SiC (10-9 cm-3) compared to Si (1010 cm-3) leads to lower leakage over temperature. Several researchers have demonstrated analog and digital circuits designed in SiC. However, a memory module is …