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Full-Text Articles in Engineering

Graphene Field Effect Transistors For Highly Sensitive And Selective Detection Of K+ Ions, Hongmei Li, Yihao Zhu, Md. Sayful Islam, Md. Anisur Rahman, Kenneth B. Walsh, Goutam Koley Dec 2017

Graphene Field Effect Transistors For Highly Sensitive And Selective Detection Of K+ Ions, Hongmei Li, Yihao Zhu, Md. Sayful Islam, Md. Anisur Rahman, Kenneth B. Walsh, Goutam Koley

Publications

Graphene-based ion sensitive field effect transistors (GISFETs) with high sensitivity and selectivity for K+ ion detection have been demonstrated utilizing valinomycin based ion selective membrane. The performance of the GISFETs for K+ ion detection was studied in various media over a concentration range of 1 μM–2 mM. The sensitivity of the sensor was found to be >60 mV/decade, which is comparable to the best Si-based commercial ISFETs, with negligible interference found from Na+ and Ca2+ ions in high concentration. The sensor performance did not change significantly in Tris–HCl solution or with repeated testing over a period of two months highlighting …


Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin Nov 2017

Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin

LSU Doctoral Dissertations

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …


Band Gap Engineering Of 2d Nanomaterials And Graphene Based Heterostructure Devices, Md Monirojjaman Monshi Jul 2017

Band Gap Engineering Of 2d Nanomaterials And Graphene Based Heterostructure Devices, Md Monirojjaman Monshi

FIU Electronic Theses and Dissertations

Two-Dimensional (2D) materials often exhibit distinguished properties as compared to their 3D counterparts and offer great potential to advance technology. However, even graphene, the first synthesized 2D material, still faces several challenges, despite its high mobility and high thermal conductivity. Similarly, germanene and silicene face challenges due to readily available semiconducting properties to be used in electronics, photonics or photocatalysis applications. Here, we propose two approaches to tune the band gap: One is by forming nanoribbon and edge functionalization and another by doping using inorganic nanoparticle’s interaction with 2D nanomaterials.

Edge functionalization of armchair germanene nanoribbons (AGeNRs) has the potential …


Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei Jun 2017

Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei

FIU Electronic Theses and Dissertations

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models.

I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and …


Flatland Plasmonics And Nanophotonics Based On Graphene And Beyond, Pai-Yen Chen, Christos Argyropoulos, Mohamed Farhat, J. Sebastian Gomez-Diaz Jan 2017

Flatland Plasmonics And Nanophotonics Based On Graphene And Beyond, Pai-Yen Chen, Christos Argyropoulos, Mohamed Farhat, J. Sebastian Gomez-Diaz

Department of Electrical and Computer Engineering: Faculty Publications

In this paper, we review and discuss how the recently discovered two-dimensional (2D) Dirac materials, particularly graphene, may be utilized as new efficient platforms for excitations of propagating and localized surface plasmon polaritons (SPPs) in the terahertz (THz) and mid-infrared (MIR) regions. The surface plasmon modes supported by the metallic 2D materials exhibit tunable plasmon resonances that are essential, yet missing, ingredients needed for THz and MIR photonic and optoelectronic devices. We describe how the atomically thin graphene monolayer and metamaterial structures based on it may tailor and control the spectral, spatial, and temporal properties of electromagnetic radiation. In the …


Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad Jan 2017

Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad

LSU Doctoral Dissertations

The Moore’s law of scaling of metal oxide semiconductor field effect transistor (MOSFET) had been a driving force toward the unprecedented advancement in development of integrated circuit over the last five decades. As the technology scales down to 7 nm node and below following the Moore’s law, conventional MOSFETs are becoming more vulnerable to extremely high off-state leakage current exhibiting a tremendous amount of standby power dissipation. Moreover, the fundamental physical limit of MOSFET of 60 mV/decade subthreshold slope exacerbates the situation further requiring current transport mechanism other than drift and diffusion for the operation of transistors. One way to …


Study Of Mos2 And Graphene-Based Heterojunctions For Electronic And Sensing Applications, Ifat Jahangir Jan 2017

Study Of Mos2 And Graphene-Based Heterojunctions For Electronic And Sensing Applications, Ifat Jahangir

Theses and Dissertations

Since the discovery of graphene, there has been an increase in two-dimensional (2D) materials research for their scalability down to atomic dimensions. Among the analogs of graphene, transition metal dichalcogenides (TMDs) are attractive due to their exceptional electronic and optoelectronic properties. MoS2, a TMD, has several advantages over graphene and the industry workhorse Si, and has been reported to demonstrate excellent transistor performances. The key obstacle in the commercialization of MoS2 technology is low carrier mobility over large areas for top-down devices. Although there were several early reports on synthesis of atomically thin MoS2 with moderate mobility, transferring large area …


Aperiodic Multilayer Graphene Based Tunable And Switchable Thermal Emitter At Mid-Infrared Frequencies, Safura Sharifi Jan 2017

Aperiodic Multilayer Graphene Based Tunable And Switchable Thermal Emitter At Mid-Infrared Frequencies, Safura Sharifi

LSU Master's Theses

Over the past few decades, there have been tremendous innovations in electronics and photonics. The development of these ultra-fast growing technologies mostly relies on fundamental understanding of novel materials with unique properties as well as new designs of device architectures with more diverse and better functionalities. In this regard, the promising approach for next-generation nanoscale electronics and photonics is to exploit the extraordinary characteristics of novel nanomaterials. There has been an explosion of interest in graphene for photonic applications as it provides a degree of freedom to manipulate electromagnetic waves. In this thesis, to tailor the broadband blackbody radiation, new …


Photo-Effects On Current Transport In Back-Gate Graphene Field-Effect Transistor, Xinlu Chen Jan 2017

Photo-Effects On Current Transport In Back-Gate Graphene Field-Effect Transistor, Xinlu Chen

LSU Master's Theses

Graphene, which has attracted wide attention because of its two-dimensional structure and high carrier mobility, is a promising candidate for potential application in optics and electronics. In this dissertation, the photonic effects on current transport in back-gate graphene field-effect transistor is investigated. Chemical vapor deposition (CVD) on metal provides a promising way for large area, controllability and high quality graphene film. The transfer and back-gate transistor fabrication processes are proposed in this dissertation. The theoretical analysis of photodetector based on back-gate graphene field-effect transistor has been done. It is shown that the photo-electronic current consists of current contributions from photovoltaic, …