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Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris
Nian X. Sun
The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.