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Electrical and Electronics

University of Arkansas, Fayetteville

High Temperature

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Full-Text Articles in Engineering

Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi May 2021

Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi

Graduate Theses and Dissertations

The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to automotive, space exploration, aerospace, deep well drilling, and gas turbines. A significant issue with the high-temperature operation is the exponential increase in leakage current. The lower intrinsic carrier concentration of SiC (10-9 cm-3) compared to Si (1010 cm-3) leads to lower leakage over temperature. Several researchers have demonstrated analog and digital circuits designed in SiC. However, a memory module is …


Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez May 2019

Characterization Of High Temperature Optocoupler For Power Electronic Systems, David Gonzalez

Electrical Engineering Undergraduate Honors Theses

High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device.