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Full-Text Articles in Engineering
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Student Publications & Research
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …
Synthesis And Electrochemical Performance Of Si/C Composite Modified By Pani, Guang-Hui Zhang, Pei-Kang Shen, Ge Sang, Ren-Jin Xiong
Synthesis And Electrochemical Performance Of Si/C Composite Modified By Pani, Guang-Hui Zhang, Pei-Kang Shen, Ge Sang, Ren-Jin Xiong
Journal of Electrochemistry
Silicon/carbon (Si/C) composite materials were prepared through high-energy ball milling and high-temperature solid-phase method, and then coated with thin polyaniline (PAni) film by oxidation. The microstructure and component of the composites were characterized by SEM, XRD, IR, TG, and the electrochemical performance was investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results showed that the surface of PAni/Si/G/C composite was coating with complete lamellar structure of PAni film. Its reversible capacity was 784 mAh.g-1and 690 mAh.g-1 could be maintained after 50th charge-discharge cycles.
Fabrication And Characterization Of Compact High Resolution Radiation Detectors Based On 4h-Sic N-Type Epilayer And Cdznte, Kelvin Juvenal Zavalla Mendoza
Fabrication And Characterization Of Compact High Resolution Radiation Detectors Based On 4h-Sic N-Type Epilayer And Cdznte, Kelvin Juvenal Zavalla Mendoza
Theses and Dissertations
The need of room-temperature, compact, and high resolution radiation detectors has opened the path for the development of new materials with suitable properties. Silicon carbide (SiC) and CdZnTe (CZT) are semiconductor materials with wide band gap that can operate efficiently at room temperatures (RT) and above. CZT has a high average atomic number (Z) which offers a high photoelectric absorption coefficient for x-/gamma rays. SiC allows high energy heavy ion detection due to its high radiation hardness even at temperatures much higher than room temperatures (RT). This thesis focuses on the fabrication and characterization of semiconductor based radiation detectors for …
Tunable Fano Resonances Based On Two-Beam Interference In Microring Resonator, Ting Hu, Ping Yu, Chen Qui, Huiye Qui, Fan Wang, Mei Yang, Xiaoqing Jiang, Hui Yu, Jianyi Yang
Tunable Fano Resonances Based On Two-Beam Interference In Microring Resonator, Ting Hu, Ping Yu, Chen Qui, Huiye Qui, Fan Wang, Mei Yang, Xiaoqing Jiang, Hui Yu, Jianyi Yang
Electrical & Computer Engineering Faculty Research
In this paper, a resonant system is demonstrated on silicon-on-insulator wafer to achieve tunable Fano resonances. In this system, the Fano resonance originates from the interference of two beams resonant in the microring resonator. The shapes of the Fano resonances are tunable through controlling the phase difference of the two beams. Both large slope and high extinctionratio (ER) are obtained when the phase difference is 0.5π or 1.5π. Experimental results show that Fano resonances with steep slope and ER over 20 dB are achieved in the whole free spectral range by controlling the microheaters to meet the phase condition.