Engineering Commons^™

Bulk Micromachining Of Silicon For Moems Prototype, Sung-Dong Suh

Doctoral Dissertations

In this dissertation, the optical application of silicon micromachining technology was investigated in order to create the three-dimensional microstructures that can be used as the components for the MOEMS prototype. These microstructures were designed and fabricated by utilizing corner compensation techniques and silicon bulk micromachining technologies. The fabricated microstructures are silicon mirror arrays that have a 1250 μm etch depth and through-holes across the OE-MCM substrate that has sixteen-fan-out OCDN on front side and a 1mm thickness.

Guided-wave OCDN on MCMs are designed and fabricated to meet the high-speed clocking requirements of next-generation digital systems through a realization of superior …

Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska

Faculty Publications

We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO₂mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …

Micro-Raman Study Of Stress Distribution Generated In Silicon During Proximity Rapid Thermal Diffusion, M. Nolan, T. Perova, R. A. Moore, C. J. Moore, Kevin Berwick, H. S. Gamble

Articles

proximity rapid thermal diffusion (RTD). A compressive stress was found on the whole silicon wafer after 15 s RTD. After 165 s RTD, the distribution of the stress across the wafer was found to be different: compressive at the edge and tensile at the middle. Thermal stress was relieved in the RTD wafers via slip dislocations. These slip dislocations were observed in the product wafers using optical microscopy. Slip lines propagated from the wafer edge to the wafer centre in eight preferred positions of maximum induced stress. The thermally induced stress and the slip dislocation density increased with time spent …