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Full-Text Articles in Engineering
Damage Effects To Si-Sio2 Structures Due To Reactive Ion Etching, Moshe D. Bunyan
Damage Effects To Si-Sio2 Structures Due To Reactive Ion Etching, Moshe D. Bunyan
Theses
This thesis presents the damage effects to the Si ? SiO2 structures due to Reactive Ion Etching (RIE). The research was carried out on Si ? SiO2 MOS capacitors which were fabricated using RIE and wet etch (Hydrofluoric acid etch (HFE)) Process. The experiment was carried out using CV technique and Ellipsometry. Various electrical parameters were measured from CV *curves of these MOS capacitors. It was observed that the CV curve obtained for the RIE etched sample showed considerable deviation from that of the control sample. This indicates the presence of excess of interface trap charge density which …
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.